Oxide thickness-dependent effects of source doping profile on the performance of single- and double-gate tunnel field-effect transistors

Oxide thickness-dependent effects of source doping profile on the performance of single- and double-gate tunnel field-effect transistors

Operated by the band-to-band tunneling at the source-channel junction, the source engineering has been considered as an efficient approach to enhance the performance of tunnel field-effect transistors (TFETs). In this paper, we report a new feature that the effects of source doping profile on the pe...

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Những tác giả chính: Nguyễn, Đăng Chiến, Chun-Hsing Shih
Định dạng: Journal article
Ngôn ngữ:English
Được phát hành: 2023
Những chủ đề:
Source doping effects
EOT scaling
band-to-band tunneling
tunnel field-effect transistor
low-bandgap TFET
Truy cập trực tuyến:https://scholar.dlu.edu.vn/handle/123456789/2077
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Thư viện lưu trữ: Thư viện Trường Đại học Đà Lạt
id oai:scholar.dlu.edu.vn:123456789-2077
record_format dspace
institution Thư viện Trường Đại học Đà Lạt
collection Thư viện số
language English
topic Source doping effects
EOT scaling
band-to-band tunneling
tunnel field-effect transistor
low-bandgap TFET
spellingShingle Source doping effects
EOT scaling
band-to-band tunneling
tunnel field-effect transistor
low-bandgap TFET
Nguyễn, Đăng Chiến
Chun-Hsing Shih
Oxide thickness-dependent effects of source doping profile on the performance of single- and double-gate tunnel field-effect transistors
description Operated by the band-to-band tunneling at the source-channel junction, the source engineering has been considered as an efficient approach to enhance the performance of tunnel field-effect transistors (TFETs). In this paper, we report a new feature that the effects of source doping profile on the performance of single- and double-gate germanium TFETs depend on equivalent oxide thickness (EOT). Based on the numerical simulations, it is shown that the effect of source concentration on the on-current is stronger with decreasing the EOT, particularly in the double-gate configuration due to the higher gate control capability. Importantly, when the EOT is decreased below a certain value, abrupt source-channel junctions are not only unnecessary, but gradual source doping profiles even improve the performance of TFETs because of the increase in vertical tunneling generation. With the continuous trend of scaling EOT, the oxide thickness-dependent effects of source doping profile should be properly considered in designing TFET devices.
format Journal article
author Nguyễn, Đăng Chiến
Chun-Hsing Shih
author_facet Nguyễn, Đăng Chiến
Chun-Hsing Shih
author_sort Nguyễn, Đăng Chiến
title Oxide thickness-dependent effects of source doping profile on the performance of single- and double-gate tunnel field-effect transistors
title_short Oxide thickness-dependent effects of source doping profile on the performance of single- and double-gate tunnel field-effect transistors
title_full Oxide thickness-dependent effects of source doping profile on the performance of single- and double-gate tunnel field-effect transistors
title_fullStr Oxide thickness-dependent effects of source doping profile on the performance of single- and double-gate tunnel field-effect transistors
title_full_unstemmed Oxide thickness-dependent effects of source doping profile on the performance of single- and double-gate tunnel field-effect transistors
title_sort oxide thickness-dependent effects of source doping profile on the performance of single- and double-gate tunnel field-effect transistors
publishDate 2023
url https://scholar.dlu.edu.vn/handle/123456789/2077
_version_ 1798256947284148224
spelling oai:scholar.dlu.edu.vn:123456789-20772024-03-01T02:42:48Z Oxide thickness-dependent effects of source doping profile on the performance of single- and double-gate tunnel field-effect transistors Nguyễn, Đăng Chiến Chun-Hsing Shih Source doping effects EOT scaling band-to-band tunneling tunnel field-effect transistor low-bandgap TFET Operated by the band-to-band tunneling at the source-channel junction, the source engineering has been considered as an efficient approach to enhance the performance of tunnel field-effect transistors (TFETs). In this paper, we report a new feature that the effects of source doping profile on the performance of single- and double-gate germanium TFETs depend on equivalent oxide thickness (EOT). Based on the numerical simulations, it is shown that the effect of source concentration on the on-current is stronger with decreasing the EOT, particularly in the double-gate configuration due to the higher gate control capability. Importantly, when the EOT is decreased below a certain value, abrupt source-channel junctions are not only unnecessary, but gradual source doping profiles even improve the performance of TFETs because of the increase in vertical tunneling generation. With the continuous trend of scaling EOT, the oxide thickness-dependent effects of source doping profile should be properly considered in designing TFET devices. 102 284-299 2023-04-28T09:50:48Z 2023-04-28T09:50:48Z 2017 Journal article Bài báo đăng trên tạp chí thuộc ISI, bao gồm book chapter https://scholar.dlu.edu.vn/handle/123456789/2077 10.1016/j.spmi.2016.12.048 en Vietnam National Foundation for Science and Technology Development (NAFOSTED) Superlattices and Microstructures 2773-0131 103.02-2015.58 [1] D.J. Frank, R.H. Dennard, E. Nowak, P.M. Solomon, Y. Taur and A.-S.P. Wong, Device scaling limits of Si MOSFETs and their application dependencies, Proc. IEEE 89 (2001) 259-288. [2] B.J. 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