Oxide thickness-dependent effects of source doping profile on the performance of single- and double-gate tunnel field-effect transistors
Operated by the band-to-band tunneling at the source-channel junction, the source engineering has been considered as an efficient approach to enhance the performance of tunnel field-effect transistors (TFETs). In this paper, we report a new feature that the effects of source doping profile on the pe...
Shranjeno v:
| Những tác giả chính: | , |
|---|---|
| Format: | Journal article |
| Jezik: | English |
| Izdano: |
2023
|
| Teme: | |
| Online dostop: | https://scholar.dlu.edu.vn/handle/123456789/2077 |
| Oznake: |
Označite
Brez oznak, prvi označite!
|
| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
|---|
Komentirajte kot prvi!