Oxide thickness-dependent effects of source doping profile on the performance of single- and double-gate tunnel field-effect transistors
Operated by the band-to-band tunneling at the source-channel junction, the source engineering has been considered as an efficient approach to enhance the performance of tunnel field-effect transistors (TFETs). In this paper, we report a new feature that the effects of source doping profile on the pe...
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| Autores principales: | , |
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| Formato: | Journal article |
| Lenguaje: | English |
| Publicado: |
2023
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| Materias: | |
| Acceso en línea: | https://scholar.dlu.edu.vn/handle/123456789/2077 |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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