Oxide thickness-dependent effects of source doping profile on the performance of single- and double-gate tunnel field-effect transistors
Operated by the band-to-band tunneling at the source-channel junction, the source engineering has been considered as an efficient approach to enhance the performance of tunnel field-effect transistors (TFETs). In this paper, we report a new feature that the effects of source doping profile on the pe...
שמור ב:
| Những tác giả chính: | , |
|---|---|
| פורמט: | Journal article |
| שפה: | English |
| יצא לאור: |
2023
|
| נושאים: | |
| גישה מקוונת: | https://scholar.dlu.edu.vn/handle/123456789/2077 |
| תגים: |
הוספת תג
אין תגיות, היה/י הראשונ/ה לתייג את הרשומה!
|
| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
|---|