Suitability of low-bandgap semiconductors for energy-efficient tunnel-field effect transistors
Owing to the breakthrough of the kT/q thermal limit of 60 mV/decade subthreshold swing at room temperature, tunnel field-effect transistors (TFETs) have demonstrated their potential for energy-efficient applications. Based on the clarified physical properties of band-to-band tunneling, this study de...
Gorde:
| Egile Nagusiak: | , , |
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| Formatua: | Conference paper |
| Hizkuntza: | English |
| Argitaratua: |
Việt Nam
2024
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| Gaiak: | |
| Sarrera elektronikoa: | https://scholar.dlu.edu.vn/handle/123456789/3309 |
| Etiketak: |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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| Gaia: | Owing to the breakthrough of the kT/q thermal limit of 60 mV/decade subthreshold swing at room temperature, tunnel field-effect transistors (TFETs) have demonstrated their potential for energy-efficient applications. Based on the clarified physical properties of band-to-band tunneling, this study demonstrates, both analytically and numerically, the suitability of low-bandgap semiconductors for low-power applications of TFETs. By using low-bandgap materials, the on-current is considerably enhanced due to the decreased tunnel barriers. The subthreshold swing is also significantly improved because of the premature transition of tunneling current from the quasi-exponential to linear regime. The appropriate operating voltage depends on the associated bandgap of semiconductors, and must be less than the bandgap voltage (Eg/q) to control the off-leakage in TFET devices. Applying low-bandgap materials in the line-tunneling TFET structure exhibits an excellent combination to optimize the on-off switching at low supply voltages. |
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