Suitability of low-bandgap semiconductors for energy-efficient tunnel-field effect transistors

Suitability of low-bandgap semiconductors for energy-efficient tunnel-field effect transistors

Owing to the breakthrough of the kT/q thermal limit of 60 mV/decade subthreshold swing at room temperature, tunnel field-effect transistors (TFETs) have demonstrated their potential for energy-efficient applications. Based on the clarified physical properties of band-to-band tunneling, this study de...

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Những tác giả chính: Nguyễn, Đăng Chiến, Luu The Vinh, Chun-Hsing Shih
Định dạng: Conference paper
Ngôn ngữ:English
Được phát hành: Việt Nam 2024
Những chủ đề:
Low-bandgap semiconductor
low-power application
line-tunneling
band-to-band tunneling
tunnel field-effect transistor (TFET)
Truy cập trực tuyến:https://scholar.dlu.edu.vn/handle/123456789/3309
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Thư viện lưu trữ: Thư viện Trường Đại học Đà Lạt
id oai:scholar.dlu.edu.vn:123456789-3309
record_format dspace
institution Thư viện Trường Đại học Đà Lạt
collection Thư viện số
language English
topic Low-bandgap semiconductor
low-power application
line-tunneling
band-to-band tunneling
tunnel field-effect transistor (TFET)
spellingShingle Low-bandgap semiconductor
low-power application
line-tunneling
band-to-band tunneling
tunnel field-effect transistor (TFET)
Nguyễn, Đăng Chiến
Luu The Vinh
Chun-Hsing Shih
Suitability of low-bandgap semiconductors for energy-efficient tunnel-field effect transistors
description Owing to the breakthrough of the kT/q thermal limit of 60 mV/decade subthreshold swing at room temperature, tunnel field-effect transistors (TFETs) have demonstrated their potential for energy-efficient applications. Based on the clarified physical properties of band-to-band tunneling, this study demonstrates, both analytically and numerically, the suitability of low-bandgap semiconductors for low-power applications of TFETs. By using low-bandgap materials, the on-current is considerably enhanced due to the decreased tunnel barriers. The subthreshold swing is also significantly improved because of the premature transition of tunneling current from the quasi-exponential to linear regime. The appropriate operating voltage depends on the associated bandgap of semiconductors, and must be less than the bandgap voltage (Eg/q) to control the off-leakage in TFET devices. Applying low-bandgap materials in the line-tunneling TFET structure exhibits an excellent combination to optimize the on-off switching at low supply voltages.
format Conference paper
author Nguyễn, Đăng Chiến
Luu The Vinh
Chun-Hsing Shih
author_facet Nguyễn, Đăng Chiến
Luu The Vinh
Chun-Hsing Shih
author_sort Nguyễn, Đăng Chiến
title Suitability of low-bandgap semiconductors for energy-efficient tunnel-field effect transistors
title_short Suitability of low-bandgap semiconductors for energy-efficient tunnel-field effect transistors
title_full Suitability of low-bandgap semiconductors for energy-efficient tunnel-field effect transistors
title_fullStr Suitability of low-bandgap semiconductors for energy-efficient tunnel-field effect transistors
title_full_unstemmed Suitability of low-bandgap semiconductors for energy-efficient tunnel-field effect transistors
title_sort suitability of low-bandgap semiconductors for energy-efficient tunnel-field effect transistors
publisher Việt Nam
publishDate 2024
url https://scholar.dlu.edu.vn/handle/123456789/3309
_version_ 1798256986899349504
spelling oai:scholar.dlu.edu.vn:123456789-33092024-03-02T10:19:32Z Suitability of low-bandgap semiconductors for energy-efficient tunnel-field effect transistors Nguyễn, Đăng Chiến Luu The Vinh Chun-Hsing Shih Low-bandgap semiconductor low-power application line-tunneling band-to-band tunneling tunnel field-effect transistor (TFET) Owing to the breakthrough of the kT/q thermal limit of 60 mV/decade subthreshold swing at room temperature, tunnel field-effect transistors (TFETs) have demonstrated their potential for energy-efficient applications. Based on the clarified physical properties of band-to-band tunneling, this study demonstrates, both analytically and numerically, the suitability of low-bandgap semiconductors for low-power applications of TFETs. By using low-bandgap materials, the on-current is considerably enhanced due to the decreased tunnel barriers. The subthreshold swing is also significantly improved because of the premature transition of tunneling current from the quasi-exponential to linear regime. The appropriate operating voltage depends on the associated bandgap of semiconductors, and must be less than the bandgap voltage (Eg/q) to control the off-leakage in TFET devices. Applying low-bandgap materials in the line-tunneling TFET structure exhibits an excellent combination to optimize the on-off switching at low supply voltages. 199-205 2024-03-02T10:19:25Z 2024-03-02T10:19:25Z 2014 Conference paper Bài báo đăng trên KYHT trong và ngoài nước (không có ISBN) https://scholar.dlu.edu.vn/handle/123456789/3309 en The 3rd Solid State Systems Symposium – VLSIs and Semiconductor Related Technologies (4S), and The 17th International Conference on Analog VLSI Circuits (AVIC) [1] Q. Zhang, W. Zhao, and S. A. Seabaugh, “Low-subthreshold swing tunnel transistors,” IEEE Electron Device Lett., vol. 27, no. 4, pp. 297-300, Apr. 2006. 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