Suitability of low-bandgap semiconductors for energy-efficient tunnel-field effect transistors
Owing to the breakthrough of the kT/q thermal limit of 60 mV/decade subthreshold swing at room temperature, tunnel field-effect transistors (TFETs) have demonstrated their potential for energy-efficient applications. Based on the clarified physical properties of band-to-band tunneling, this study de...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Conference paper |
| Sprache: | English |
| Veröffentlicht: |
Việt Nam
2024
|
| Schlagworte: | |
| Online Zugang: | https://scholar.dlu.edu.vn/handle/123456789/3309 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
|---|
Schreiben Sie den ersten Kommentar!