Suitability of low-bandgap semiconductors for energy-efficient tunnel-field effect transistors
Owing to the breakthrough of the kT/q thermal limit of 60 mV/decade subthreshold swing at room temperature, tunnel field-effect transistors (TFETs) have demonstrated their potential for energy-efficient applications. Based on the clarified physical properties of band-to-band tunneling, this study de...
Tallennettuna:
| Päätekijät: | , , |
|---|---|
| Aineistotyyppi: | Conference paper |
| Kieli: | English |
| Julkaistu: |
Việt Nam
2024
|
| Aiheet: | |
| Linkit: | https://scholar.dlu.edu.vn/handle/123456789/3309 |
| Tagit: |
Lisää tagi
Ei tageja, Lisää ensimmäinen tagi!
|
| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
|---|
Lisää ensimmäinen kommentti!