Suitability of low-bandgap semiconductors for energy-efficient tunnel-field effect transistors
Owing to the breakthrough of the kT/q thermal limit of 60 mV/decade subthreshold swing at room temperature, tunnel field-effect transistors (TFETs) have demonstrated their potential for energy-efficient applications. Based on the clarified physical properties of band-to-band tunneling, this study de...
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| Главные авторы: | , , |
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| Формат: | Conference paper |
| Язык: | English |
| Опубликовано: |
Việt Nam
2024
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| Предметы: | |
| Online-ссылка: | https://scholar.dlu.edu.vn/handle/123456789/3309 |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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