Suitability of low-bandgap semiconductors for energy-efficient tunnel-field effect transistors
Owing to the breakthrough of the kT/q thermal limit of 60 mV/decade subthreshold swing at room temperature, tunnel field-effect transistors (TFETs) have demonstrated their potential for energy-efficient applications. Based on the clarified physical properties of band-to-band tunneling, this study de...
Đã lưu trong:
| Những tác giả chính: | , , |
|---|---|
| 格式: | Conference paper |
| 語言: | English |
| 出版: |
Việt Nam
2024
|
| 主題: | |
| 在線閱讀: | https://scholar.dlu.edu.vn/handle/123456789/3309 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
|---|