Bandgap-dependent deviations of local and nonlocal from mixed band-to-band tunneling models
The nonlocal electric field approach has been widely accepted for Kane’s band-to-band tunneling (BTBT) model to calculate, both analytically and numerically, the tunneling current in tunnel field-effect transistors (TFETs). In this paper, we demonstrate that the tunneling current deviations of the l...
Đã lưu trong:
| Những tác giả chính: | , , , |
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| Formáid: | Conference paper |
| Teanga: | English |
| Foilsithe: |
Bach Khoa Publishing House
2024
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| Ábhair: | |
| Rochtain Ar Líne: | https://scholar.dlu.edu.vn/handle/123456789/3313 |
| Clibeanna: |
Cuir Clib Leis
Gan Chlibeanna, Bí ar an gcéad duine leis an taifead seo a chlibeáil!
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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| Achoimre: | The nonlocal electric field approach has been widely accepted for Kane’s band-to-band tunneling (BTBT) model to calculate, both analytically and numerically, the tunneling current in tunnel field-effect transistors (TFETs). In this paper, we demonstrate that the tunneling current deviations of the local and nonlocal BTBT models from the mixed model counterpart, which is shown to be a more physically realistic approach by using both local and nonlocal fields, depend significantly on the material bandgap. The deviation of the nonlocal model from the mixed model increases with decreasing the bandgap and applied voltage because the tunneling generation is progressively extended to the small band-bending region. Although the deviation between the local and mixed models is considerably decreased when scaling down the bandgap because of the slow variation of tunneling probability under the change of electric field, it is still relatively large in low-bandgap semiconductors. With the continuous trend of scaling down bandgap and supply voltage, the mixed BTBT model should be used rather than the nonlocal BTBT approach to properly determine the tunneling current in TFET devices. |
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