Modeling of direct band-to-band tunneling in one-sided pn junctions based on Kane’s model

Recently, the band-to-band tunneling (BTBT) has been employed as a main mechanism to produce the conduction current in tunnel field-effect transistors (TFETs) which are currently considered as a potential candidate for low power integrated circuits because of their achievable sub-60 mV/decade subthr...

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Những tác giả chính: Nguyễn, Đăng Chiến, Luu The Vinh, Hoang Sy Duc
格式: Conference paper
語言:English
出版: Bach Khoa Publishing House 2024
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在線閱讀:https://scholar.dlu.edu.vn/handle/123456789/3314
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