Bandgap-dependent deviations of local and nonlocal from mixed band-to-band tunneling models
The nonlocal electric field approach has been widely accepted for Kane’s band-to-band tunneling (BTBT) model to calculate, both analytically and numerically, the tunneling current in tunnel field-effect transistors (TFETs). In this paper, we demonstrate that the tunneling current deviations of the l...
Wedi'i Gadw mewn:
Prif Awduron: | Nguyễn, Đăng Chiến, Hoang Sy Duc, Chun-Hsing Shih, Dinh Sy Hien |
---|---|
Fformat: | Conference paper |
Iaith: | English |
Cyhoeddwyd: |
Bach Khoa Publishing House
2024
|
Pynciau: | |
Mynediad Ar-lein: | https://scholar.dlu.edu.vn/handle/123456789/3313 |
Tagiau: |
Ychwanegu Tag
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
|
Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
---|
Eitemau Tebyg
-
Modeling of direct band-to-band tunneling in one-sided pn junctions based on Kane’s model
gan: Nguyễn, Đăng Chiến, et al.
Cyhoeddwyd: (2024) -
Suitability of low-bandgap semiconductors for energy-efficient tunnel-field effect transistors
gan: Nguyễn, Đăng Chiến, et al.
Cyhoeddwyd: (2024) -
A very low bandgap line-tunnel field effect transistor with channel-buried oxide and laterally doped pocket
gan: Bui Huu Thai, et al.
Cyhoeddwyd: (2024) -
A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET
gan: Bui, Huu Thai, et al.
Cyhoeddwyd: (2024) -
Bandgap-dependent onset behavior of output characteristics in line-tunneling field-effect transistors
gan: Chun-Hsing Shih, et al.
Cyhoeddwyd: (2023)