Bandgap-dependent deviations of local and nonlocal from mixed band-to-band tunneling models
The nonlocal electric field approach has been widely accepted for Kane’s band-to-band tunneling (BTBT) model to calculate, both analytically and numerically, the tunneling current in tunnel field-effect transistors (TFETs). In this paper, we demonstrate that the tunneling current deviations of the l...
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oai:scholar.dlu.edu.vn:123456789-3313 |
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Thư viện Trường Đại học Đà Lạt |
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Low-bandgap material band-to-band tunneling nonlocal BTBT mixed BTBT model Kane model |
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Low-bandgap material band-to-band tunneling nonlocal BTBT mixed BTBT model Kane model Nguyễn, Đăng Chiến Hoang Sy Duc Chun-Hsing Shih Dinh Sy Hien Bandgap-dependent deviations of local and nonlocal from mixed band-to-band tunneling models |
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The nonlocal electric field approach has been widely accepted for Kane’s band-to-band tunneling (BTBT) model to calculate, both analytically and numerically, the tunneling current in tunnel field-effect transistors (TFETs). In this paper, we demonstrate that the tunneling current deviations of the local and nonlocal BTBT models from the mixed model counterpart, which is shown to be a more physically realistic approach by using both local and nonlocal fields, depend significantly on the material bandgap. The deviation of the nonlocal model from the mixed model increases with decreasing the bandgap and applied voltage because the tunneling generation is progressively extended to the small band-bending region. Although the deviation between the local and mixed models is considerably decreased when scaling down the bandgap because of the slow variation of tunneling probability under the change of electric field, it is still relatively large in low-bandgap semiconductors. With the continuous trend of scaling down bandgap and supply voltage, the mixed BTBT model should be used rather than the nonlocal BTBT approach to properly determine the tunneling current in TFET devices. |
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Conference paper |
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Nguyễn, Đăng Chiến Hoang Sy Duc Chun-Hsing Shih Dinh Sy Hien |
| author_facet |
Nguyễn, Đăng Chiến Hoang Sy Duc Chun-Hsing Shih Dinh Sy Hien |
| author_sort |
Nguyễn, Đăng Chiến |
| title |
Bandgap-dependent deviations of local and nonlocal from mixed band-to-band tunneling models |
| title_short |
Bandgap-dependent deviations of local and nonlocal from mixed band-to-band tunneling models |
| title_full |
Bandgap-dependent deviations of local and nonlocal from mixed band-to-band tunneling models |
| title_fullStr |
Bandgap-dependent deviations of local and nonlocal from mixed band-to-band tunneling models |
| title_full_unstemmed |
Bandgap-dependent deviations of local and nonlocal from mixed band-to-band tunneling models |
| title_sort |
bandgap-dependent deviations of local and nonlocal from mixed band-to-band tunneling models |
| publisher |
Bach Khoa Publishing House |
| publishDate |
2024 |
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https://scholar.dlu.edu.vn/handle/123456789/3313 |
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1798256988644179968 |
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oai:scholar.dlu.edu.vn:123456789-33132024-03-02T11:41:29Z Bandgap-dependent deviations of local and nonlocal from mixed band-to-band tunneling models Nguyễn, Đăng Chiến Hoang Sy Duc Chun-Hsing Shih Dinh Sy Hien Low-bandgap material band-to-band tunneling nonlocal BTBT mixed BTBT model Kane model The nonlocal electric field approach has been widely accepted for Kane’s band-to-band tunneling (BTBT) model to calculate, both analytically and numerically, the tunneling current in tunnel field-effect transistors (TFETs). In this paper, we demonstrate that the tunneling current deviations of the local and nonlocal BTBT models from the mixed model counterpart, which is shown to be a more physically realistic approach by using both local and nonlocal fields, depend significantly on the material bandgap. The deviation of the nonlocal model from the mixed model increases with decreasing the bandgap and applied voltage because the tunneling generation is progressively extended to the small band-bending region. Although the deviation between the local and mixed models is considerably decreased when scaling down the bandgap because of the slow variation of tunneling probability under the change of electric field, it is still relatively large in low-bandgap semiconductors. With the continuous trend of scaling down bandgap and supply voltage, the mixed BTBT model should be used rather than the nonlocal BTBT approach to properly determine the tunneling current in TFET devices. 36-43 2024-03-02T11:41:20Z 2024-03-02T11:41:20Z 2016 Conference paper Bài báo đăng trên KYHT trong nước (có ISBN) 9786049500107 https://scholar.dlu.edu.vn/handle/123456789/3313 en Physical properties, electrical characteristics and device design of tunnel field-effect transistors using low-bandgap semiconductors International Conference on Advanced Materials and Nanotechnology (ICAMN) 103.02-2015.58 [1] T. Baba, Proposal for surface tunnel transistors, Jpn. J. Appl. Phys. 31 (1992) L455-L457. [2] Q. Zhang, W. Zhao, and S. A. Seabaugh, Low-subthreshold swing tunnel transistors, IEEE Electron Device Lett. 27 (2006) 297-300. [3] J. Appenzeller, Y.-M. Lin, J. Knoch, and Ph. Avouris, Band-to-band tunneling in carbon nanotube field-effect transistors, Phys. Rev. Lett. 93 (2004) 196905. 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Tanabe, M. Masahara, T. Yasuda, S. Migita, and H. Ota, On the nonlocal modeling of tunnel-FETs Device and Compact models, Proc. Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), 2012, pp. 284–287. [17] N. D. Chien, C.-H. Shih, P. C. Hoa, N. H. Minh, D. T. T. Hien, and L. H. Nhung, Theoretical evaluation of maximum electric field approximation of direct band-to-band tunneling Kane model for low bandgap semiconductors, J. Phys. Conf. Ser. 726 (2016) 012002. [18] W. M. Reddick and G. A. J. Amaratunga, Silicon surface tunneling transistor, Appl. Phys. Lett. 67 (1995) 494-496. [19] O. M. Nayfeh, J. L. Hoyt, D. A. Antoniadis, Strained-Si1-xGex/Si band-to-band tunneling transistors: Impact of tunnel junction germanium composition and doping concentration on switching behavior, IEEE Trans. Electron Devices 56 (2009) 2264-2269. [20] C.-H. Shih and N. D. Chien, Physical operation and device design of short-channel tunnel field-effect transistors with graded silicon-germanium heterojunctions, J. Appl. Phys. 113 (2013) 134507. [21] A. S. Verhulst, D. Leonelli, R. Rooyackers, and G. Groeseneken, Drain voltage dependent analytical model of tunnel field-effect transistors, J. Appl. Phys. 110 (2011) 024510. [22] C.-H. Shih and N. D. Chien, Physical properties and analytical models of band-to-band tunneling in low-bandgap semiconductors, J. Appl. Phys. 115 (2014) 014507. [23] W. G. Vandenberghe, A. S. Verhulst, G. Groeseneken, B. Soree, and W. Magnus, Analytical model for point and line tunneling in a tunnel field-effect transistor, Proc. Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), 2008, pp. 137-140. [24] J. L. Moll, Physics of Semiconductors, McGraw-Hill, 1970, p. 252. [25] C.-H. Shih and N. D. Chien, Design and modeling of line-tunneling field-effect transistors using low-bandgap semiconductors, IEEE Trans. Electron Devices 61 (2014) 1907-1913. Bach Khoa Publishing House Việt Nam |