Modeling of direct band-to-band tunneling in one-sided pn junctions based on Kane’s model
Recently, the band-to-band tunneling (BTBT) has been employed as a main mechanism to produce the conduction current in tunnel field-effect transistors (TFETs) which are currently considered as a potential candidate for low power integrated circuits because of their achievable sub-60 mV/decade subthr...
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oai:scholar.dlu.edu.vn:123456789-33142024-03-02T11:48:12Z Modeling of direct band-to-band tunneling in one-sided pn junctions based on Kane’s model Nguyễn, Đăng Chiến Luu The Vinh Hoang Sy Duc band-to-band tunneling p/n junction Kane model tunnel diode TFET Recently, the band-to-band tunneling (BTBT) has been employed as a main mechanism to produce the conduction current in tunnel field-effect transistors (TFETs) which are currently considered as a potential candidate for low power integrated circuits because of their achievable sub-60 mV/decade subthreshold swing at room temperature. Based on the Kane model, this study presents the calculation of direct BTBT currents in one-sided p/n junctions, including p/n++ and n/p++ junctions, which are basic tunnel junctions in typical TFET devices. It is shown that the calculated current-voltage curves of the two junctions are symmetric with each other because of the symmetry of all material and structure parameters of the two devices. The calculation methods of BTBT currents in the one-sided p/n junctions can be applied for computing the tunneling current, studying the device physics and characteristics of TFETs operated in both n- and p-type modes. 469-472 2024-03-02T11:48:03Z 2024-03-02T11:48:03Z 2017 Conference paper Bài báo đăng trên KYHT trong nước (có ISBN) 9786049503269 https://scholar.dlu.edu.vn/handle/123456789/3314 en Physical properties, electrical characteristics and device design of tunnel field-effect transistors using low-bandgap semiconductors National Conference on Solid-State Physics and Material Science (SPMS) 103.02-2015.58 1. S. M. Sze, Physics of Semiconductor Devices, Wiley, New York, 1981. 2. W. Y. Choi, B.-G. Park, J. D. Lee, T.-J. K. Liu, IEEE Electron Device Lett., vol. 28, no. 8, p. 743 (2007). 3. A. M. Ionescu, H. Riel, Nature, vol. 479, p. 329 (2011). 4. O. M. Nayfeh, J. L. Hoyt, D. A. Antoniadis, IEEE Trans. Electron Devices, vol. 56, no. 10, p. 2264 (2009). 5. K.-H. Kao, A. S. Verhulst, W. G. Vandenberghe, B. Sorée, G. Groeseneken, K. D. Meyer, IEEE Trans. Electron Devices, vol. 59, no. 2, p. 292 (2012). 6. C. Zener, Proc. R. Soc. Lond. A, vol. 145, no. 855, p. 523 (1934). 7. L. Esaki, Phys. Rev., vol. 109, no. 2, p. 603 (1958). 8. M. Shin, J. Appl. Phys., vol. 106, no. 8, p. 054505 (2009). 9. M. Luisier, G. Klimeck, J. Appl. Phys., vol. 107, no. 8, p. 084507 (2010). 10. G. A. M. Hurkx, Solid-State Electron., vol. 32, no. 8, p. 665 (1989). 11. E. O. Kane, J. Appl. Phys., vol. 31, no. 1, p. 83 (1961). 12. S. H. Kim, H. Kam, C. Hu, T.-J. K. Liu, VLSI Symp. Tech. Dig., Honolulu, p. 178 (2009). 13. ATLAS User's Manual a 2D-3D Numerical Device Simulator, Silvaco Inc., 2009. 14. Synopsys MEDICI User’s Manual, Synopsys Inc., Mountain View, CA, 2010. 15. C.-H. Shih, N. D. Chien, J. Appl. Phys., vol. 115, no. 4, p. 014507 (2014). 16. N. D. Chien, H. S. Duc, C.-H. Shih, D. S. Hien, Proceedings of International Conference on Advanced Materials and Nanotechnology (ICAMN), Hanoi, p. 36 (2016). 17. M. E. Levinshtein, S. L. Rumyantsev, M. S. Shur, Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe, Wiley, New York (2001). Bach Khoa Publishing House Việt Nam |
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band-to-band tunneling p/n junction Kane model tunnel diode TFET |
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band-to-band tunneling p/n junction Kane model tunnel diode TFET Nguyễn, Đăng Chiến Luu The Vinh Hoang Sy Duc Modeling of direct band-to-band tunneling in one-sided pn junctions based on Kane’s model |
description |
Recently, the band-to-band tunneling (BTBT) has been employed as a main mechanism to produce the conduction current in tunnel field-effect transistors (TFETs) which are currently considered as a potential candidate for low power integrated circuits because of their achievable sub-60 mV/decade subthreshold swing at room temperature. Based on the Kane model, this study presents the calculation of direct BTBT currents in one-sided p/n junctions, including p/n++ and n/p++ junctions, which are basic tunnel junctions in typical TFET devices. It is shown that the calculated current-voltage curves of the two junctions are symmetric with each other because of the symmetry of all material and structure parameters of the two devices. The calculation methods of BTBT currents in the one-sided p/n junctions can be applied for computing the tunneling current, studying the device physics and characteristics of TFETs operated in both n- and p-type modes. |
format |
Conference paper |
author |
Nguyễn, Đăng Chiến Luu The Vinh Hoang Sy Duc |
author_facet |
Nguyễn, Đăng Chiến Luu The Vinh Hoang Sy Duc |
author_sort |
Nguyễn, Đăng Chiến |
title |
Modeling of direct band-to-band tunneling in one-sided pn junctions based on Kane’s model |
title_short |
Modeling of direct band-to-band tunneling in one-sided pn junctions based on Kane’s model |
title_full |
Modeling of direct band-to-band tunneling in one-sided pn junctions based on Kane’s model |
title_fullStr |
Modeling of direct band-to-band tunneling in one-sided pn junctions based on Kane’s model |
title_full_unstemmed |
Modeling of direct band-to-band tunneling in one-sided pn junctions based on Kane’s model |
title_sort |
modeling of direct band-to-band tunneling in one-sided pn junctions based on kane’s model |
publisher |
Bach Khoa Publishing House |
publishDate |
2024 |
url |
https://scholar.dlu.edu.vn/handle/123456789/3314 |
_version_ |
1798256989204119552 |