Modeling of direct band-to-band tunneling in one-sided pn junctions based on Kane’s model

Recently, the band-to-band tunneling (BTBT) has been employed as a main mechanism to produce the conduction current in tunnel field-effect transistors (TFETs) which are currently considered as a potential candidate for low power integrated circuits because of their achievable sub-60 mV/decade subthr...

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Những tác giả chính: Nguyễn, Đăng Chiến, Luu The Vinh, Hoang Sy Duc
Định dạng: Conference paper
Ngôn ngữ:English
Được phát hành: Bach Khoa Publishing House 2024
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Truy cập trực tuyến:https://scholar.dlu.edu.vn/handle/123456789/3314
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spelling oai:scholar.dlu.edu.vn:123456789-33142024-03-02T11:48:12Z Modeling of direct band-to-band tunneling in one-sided pn junctions based on Kane’s model Nguyễn, Đăng Chiến Luu The Vinh Hoang Sy Duc band-to-band tunneling p/n junction Kane model tunnel diode TFET Recently, the band-to-band tunneling (BTBT) has been employed as a main mechanism to produce the conduction current in tunnel field-effect transistors (TFETs) which are currently considered as a potential candidate for low power integrated circuits because of their achievable sub-60 mV/decade subthreshold swing at room temperature. Based on the Kane model, this study presents the calculation of direct BTBT currents in one-sided p/n junctions, including p/n++ and n/p++ junctions, which are basic tunnel junctions in typical TFET devices. It is shown that the calculated current-voltage curves of the two junctions are symmetric with each other because of the symmetry of all material and structure parameters of the two devices. The calculation methods of BTBT currents in the one-sided p/n junctions can be applied for computing the tunneling current, studying the device physics and characteristics of TFETs operated in both n- and p-type modes. 469-472 2024-03-02T11:48:03Z 2024-03-02T11:48:03Z 2017 Conference paper Bài báo đăng trên KYHT trong nước (có ISBN) 9786049503269 https://scholar.dlu.edu.vn/handle/123456789/3314 en Physical properties, electrical characteristics and device design of tunnel field-effect transistors using low-bandgap semiconductors National Conference on Solid-State Physics and Material Science (SPMS) 103.02-2015.58 1. S. M. Sze, Physics of Semiconductor Devices, Wiley, New York, 1981. 2. W. Y. Choi, B.-G. Park, J. D. Lee, T.-J. K. Liu, IEEE Electron Device Lett., vol. 28, no. 8, p. 743 (2007). 3. A. M. Ionescu, H. Riel, Nature, vol. 479, p. 329 (2011). 4. O. M. Nayfeh, J. L. Hoyt, D. A. Antoniadis, IEEE Trans. Electron Devices, vol. 56, no. 10, p. 2264 (2009). 5. K.-H. Kao, A. S. Verhulst, W. G. Vandenberghe, B. Sorée, G. Groeseneken, K. D. Meyer, IEEE Trans. Electron Devices, vol. 59, no. 2, p. 292 (2012). 6. C. Zener, Proc. R. Soc. Lond. A, vol. 145, no. 855, p. 523 (1934). 7. L. Esaki, Phys. Rev., vol. 109, no. 2, p. 603 (1958). 8. M. Shin, J. Appl. Phys., vol. 106, no. 8, p. 054505 (2009). 9. M. Luisier, G. Klimeck, J. Appl. Phys., vol. 107, no. 8, p. 084507 (2010). 10. G. A. M. Hurkx, Solid-State Electron., vol. 32, no. 8, p. 665 (1989). 11. E. O. Kane, J. Appl. Phys., vol. 31, no. 1, p. 83 (1961). 12. S. H. Kim, H. Kam, C. Hu, T.-J. K. Liu, VLSI Symp. Tech. Dig., Honolulu, p. 178 (2009). 13. ATLAS User's Manual a 2D-3D Numerical Device Simulator, Silvaco Inc., 2009. 14. Synopsys MEDICI User’s Manual, Synopsys Inc., Mountain View, CA, 2010. 15. C.-H. Shih, N. D. Chien, J. Appl. Phys., vol. 115, no. 4, p. 014507 (2014). 16. N. D. Chien, H. S. Duc, C.-H. Shih, D. S. Hien, Proceedings of International Conference on Advanced Materials and Nanotechnology (ICAMN), Hanoi, p. 36 (2016). 17. M. E. Levinshtein, S. L. Rumyantsev, M. S. Shur, Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe, Wiley, New York (2001). Bach Khoa Publishing House Việt Nam
institution Thư viện Trường Đại học Đà Lạt
collection Thư viện số
language English
topic band-to-band tunneling
p/n junction
Kane model
tunnel diode
TFET
spellingShingle band-to-band tunneling
p/n junction
Kane model
tunnel diode
TFET
Nguyễn, Đăng Chiến
Luu The Vinh
Hoang Sy Duc
Modeling of direct band-to-band tunneling in one-sided pn junctions based on Kane’s model
description Recently, the band-to-band tunneling (BTBT) has been employed as a main mechanism to produce the conduction current in tunnel field-effect transistors (TFETs) which are currently considered as a potential candidate for low power integrated circuits because of their achievable sub-60 mV/decade subthreshold swing at room temperature. Based on the Kane model, this study presents the calculation of direct BTBT currents in one-sided p/n junctions, including p/n++ and n/p++ junctions, which are basic tunnel junctions in typical TFET devices. It is shown that the calculated current-voltage curves of the two junctions are symmetric with each other because of the symmetry of all material and structure parameters of the two devices. The calculation methods of BTBT currents in the one-sided p/n junctions can be applied for computing the tunneling current, studying the device physics and characteristics of TFETs operated in both n- and p-type modes.
format Conference paper
author Nguyễn, Đăng Chiến
Luu The Vinh
Hoang Sy Duc
author_facet Nguyễn, Đăng Chiến
Luu The Vinh
Hoang Sy Duc
author_sort Nguyễn, Đăng Chiến
title Modeling of direct band-to-band tunneling in one-sided pn junctions based on Kane’s model
title_short Modeling of direct band-to-band tunneling in one-sided pn junctions based on Kane’s model
title_full Modeling of direct band-to-band tunneling in one-sided pn junctions based on Kane’s model
title_fullStr Modeling of direct band-to-band tunneling in one-sided pn junctions based on Kane’s model
title_full_unstemmed Modeling of direct band-to-band tunneling in one-sided pn junctions based on Kane’s model
title_sort modeling of direct band-to-band tunneling in one-sided pn junctions based on kane’s model
publisher Bach Khoa Publishing House
publishDate 2024
url https://scholar.dlu.edu.vn/handle/123456789/3314
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