Modeling of direct band-to-band tunneling in one-sided pn junctions based on Kane’s model
Recently, the band-to-band tunneling (BTBT) has been employed as a main mechanism to produce the conduction current in tunnel field-effect transistors (TFETs) which are currently considered as a potential candidate for low power integrated circuits because of their achievable sub-60 mV/decade subthr...
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| Главные авторы: | , , |
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| Формат: | Conference paper |
| Язык: | English |
| Опубликовано: |
Bach Khoa Publishing House
2024
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| Предметы: | |
| Online-ссылка: | https://scholar.dlu.edu.vn/handle/123456789/3314 |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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