Modeling of direct band-to-band tunneling in one-sided pn junctions based on Kane’s model
Recently, the band-to-band tunneling (BTBT) has been employed as a main mechanism to produce the conduction current in tunnel field-effect transistors (TFETs) which are currently considered as a potential candidate for low power integrated circuits because of their achievable sub-60 mV/decade subthr...
Đã lưu trong:
| Những tác giả chính: | , , |
|---|---|
| Format: | Conference paper |
| Sprog: | English |
| Udgivet: |
Bach Khoa Publishing House
2024
|
| Fag: | |
| Online adgang: | https://scholar.dlu.edu.vn/handle/123456789/3314 |
| Tags: |
Tilføj Tag
Ingen Tags, Vær først til at tagge denne postø!
|
| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
|---|