A very low bandgap line-tunnel field effect transistor with channel-buried oxide and laterally doped pocket

A very low bandgap line-tunnel field effect transistor with channel-buried oxide and laterally doped pocket

Low bandgap and line tunneling techniques have demonstrated the most effectiveness in enhancing the on-current of tunnel field-effect transistors (TFETs). This study examines the mechanisms and designs of channel-buried oxide and laterally doped pocket for a very low bandgap line-TFET. Numerical TCA...

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Những tác giả chính: Bui Huu Thai, Chun-Hsing Shih, Nguyễn, Đăng Chiến
Định dạng: Journal article
Ngôn ngữ:English
Được phát hành: Trường Đại học Đà Lạt 2024
Những chủ đề:
band-to-band tunneling
Channel-buried oxide
Doping pocket
Line tunneling
Low bandgap TFET
Truy cập trực tuyến:https://scholar.dlu.edu.vn/handle/123456789/3589
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id oai:scholar.dlu.edu.vn:123456789-3589
record_format dspace
institution Thư viện Trường Đại học Đà Lạt
collection Thư viện số
language English
topic band-to-band tunneling
Channel-buried oxide
Doping pocket
Line tunneling
Low bandgap TFET
spellingShingle band-to-band tunneling
Channel-buried oxide
Doping pocket
Line tunneling
Low bandgap TFET
Bui Huu Thai
Chun-Hsing Shih
Nguyễn, Đăng Chiến
A very low bandgap line-tunnel field effect transistor with channel-buried oxide and laterally doped pocket
description Low bandgap and line tunneling techniques have demonstrated the most effectiveness in enhancing the on-current of tunnel field-effect transistors (TFETs). This study examines the mechanisms and designs of channel-buried oxide and laterally doped pocket for a very low bandgap line-TFET. Numerical TCAD simulations show that the channel-buried oxide is needed to prevent the off-state lateral tunneling while still maintaining the on-state vertical tunneling. The buried oxide pillar should be high so that the channel is thin about 10 nm thickness to completely suppress the tunneling leakage. The dopant pocket is required to trigger the line tunneling earlier than the point tunneling to improve the subthreshold swing and on-current. Increasing the pocket concentration or decreasing the pocket thickness both cause an increase not only in the vertical band bending but also in the effective gate-insulator thickness. Because of the trade-off between these two operation parameters, for a given thickness/concentration, there exists an optimal concentration/thickness of the pocket to maximize the on-current. The on-current is optimized using a heavy and thin pocket for which the band bending is maximized and the effective gate-insulator thickness is minimized. For the fabrication feasibility using existing doping techniques, the pocket concentration and thickness should be respectively 1019 cm-3 and 4 nm to maximize the on-current of the InAs line-TFET.
format Journal article
author Bui Huu Thai
Chun-Hsing Shih
Nguyễn, Đăng Chiến
author_facet Bui Huu Thai
Chun-Hsing Shih
Nguyễn, Đăng Chiến
author_sort Bui Huu Thai
title A very low bandgap line-tunnel field effect transistor with channel-buried oxide and laterally doped pocket
title_short A very low bandgap line-tunnel field effect transistor with channel-buried oxide and laterally doped pocket
title_full A very low bandgap line-tunnel field effect transistor with channel-buried oxide and laterally doped pocket
title_fullStr A very low bandgap line-tunnel field effect transistor with channel-buried oxide and laterally doped pocket
title_full_unstemmed A very low bandgap line-tunnel field effect transistor with channel-buried oxide and laterally doped pocket
title_sort very low bandgap line-tunnel field effect transistor with channel-buried oxide and laterally doped pocket
publisher Trường Đại học Đà Lạt
publishDate 2024
url https://scholar.dlu.edu.vn/handle/123456789/3589
_version_ 1813142642851053568
spelling oai:scholar.dlu.edu.vn:123456789-35892024-09-26T13:00:49Z A very low bandgap line-tunnel field effect transistor with channel-buried oxide and laterally doped pocket Bui Huu Thai Chun-Hsing Shih Nguyễn, Đăng Chiến band-to-band tunneling Channel-buried oxide Doping pocket Line tunneling Low bandgap TFET Low bandgap and line tunneling techniques have demonstrated the most effectiveness in enhancing the on-current of tunnel field-effect transistors (TFETs). This study examines the mechanisms and designs of channel-buried oxide and laterally doped pocket for a very low bandgap line-TFET. Numerical TCAD simulations show that the channel-buried oxide is needed to prevent the off-state lateral tunneling while still maintaining the on-state vertical tunneling. The buried oxide pillar should be high so that the channel is thin about 10 nm thickness to completely suppress the tunneling leakage. The dopant pocket is required to trigger the line tunneling earlier than the point tunneling to improve the subthreshold swing and on-current. Increasing the pocket concentration or decreasing the pocket thickness both cause an increase not only in the vertical band bending but also in the effective gate-insulator thickness. Because of the trade-off between these two operation parameters, for a given thickness/concentration, there exists an optimal concentration/thickness of the pocket to maximize the on-current. The on-current is optimized using a heavy and thin pocket for which the band bending is maximized and the effective gate-insulator thickness is minimized. For the fabrication feasibility using existing doping techniques, the pocket concentration and thickness should be respectively 1019 cm-3 and 4 nm to maximize the on-current of the InAs line-TFET. 14 3S 61-75 2024-09-26T12:59:15Z 2024-09-26T12:59:15Z 2024 Journal article Bài báo đăng trên tạp chí trong nước (có ISSN), bao gồm book chapter https://scholar.dlu.edu.vn/handle/123456789/3589 10.37569/DalatUniversity.14.3S.1313(2024) en Nghiên cứu tối ưu hóa các tham số của thân linh kiện nâng cao đặc tính điện của các transistor hiệu ứng trường xuyên hầm (TFET) Dalat University Journal of Science 0866-787X B2023-DLA-03 Ahn, T. J. & Yu, Y. S. (2018). Electrical characteristics of Ge/Si-based source pocket tunnel field-effect transistors, J. Nanosci. Nanotechnol., 18(9), 5887-5892. https://doi.org/10.1166/jnn.2018.15579 Appenzeller, J., Lin, Y.-M., Knoch, J., Avouris, Ph. (2004). Band-to-band tunneling in carbon nanotube field-effect transistors, Phys. Rev. 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