A very low bandgap line-tunnel field effect transistor with channel-buried oxide and laterally doped pocket
Low bandgap and line tunneling techniques have demonstrated the most effectiveness in enhancing the on-current of tunnel field-effect transistors (TFETs). This study examines the mechanisms and designs of channel-buried oxide and laterally doped pocket for a very low bandgap line-TFET. Numerical TCA...
Wedi'i Gadw mewn:
| Prif Awduron: | , , |
|---|---|
| Fformat: | Journal article |
| Iaith: | English |
| Cyhoeddwyd: |
Trường Đại học Đà Lạt
2024
|
| Pynciau: | |
| Mynediad Ar-lein: | https://scholar.dlu.edu.vn/handle/123456789/3589 |
| Tagiau: |
Ychwanegu Tag
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
|
| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
|---|