A very low bandgap line-tunnel field effect transistor with channel-buried oxide and laterally doped pocket

Những quyển sách tương tự

• Oxide thickness-dependent effects of source doping profile on the performance of single- and double-gate tunnel field-effect transistors
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  Được phát hành: (2023)
• Suitability of low-bandgap semiconductors for energy-efficient tunnel-field effect transistors
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  Được phát hành: (2024)
• Bandgap-dependent onset behavior of output characteristics in line-tunneling field-effect transistors
  Bỡi: Chun-Hsing Shih, et al.
  Được phát hành: (2023)
• Design and modeling of line-tunneling field-effect transistors using low bandgap semiconductors
  Bỡi: Chun-Hsing Shih, et al.
  Được phát hành: (2024)
• Modeling of direct band-to-band tunneling in one-sided pn junctions based on Kane’s model
  Bỡi: Nguyễn, Đăng Chiến, et al.
  Được phát hành: (2024)