A very low bandgap line-tunnel field effect transistor with channel-buried oxide and laterally doped pocket
Low bandgap and line tunneling techniques have demonstrated the most effectiveness in enhancing the on-current of tunnel field-effect transistors (TFETs). This study examines the mechanisms and designs of channel-buried oxide and laterally doped pocket for a very low bandgap line-TFET. Numerical TCA...
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| Hlavní autoři: | , , |
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| Médium: | Journal article |
| Jazyk: | English |
| Vydáno: |
Trường Đại học Đà Lạt
2024
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| On-line přístup: | https://scholar.dlu.edu.vn/handle/123456789/3589 |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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