Short-channel effects in tunnel field-effect transistors with different configurations of abrupt and graded Si/SiGe heterojunctions
The heterojunction technique has recently been considered as an effective approach to simultaneously achieve a high on-current and low ambipolar off-leakage in tunnel field-effect transistors (TFETs). In this paper, we propose the various configurations of abrupt and graded Si/SiGe heterojunctions f...
Gorde:
| Egile Nagusiak: | , |
|---|---|
| Formatua: | Journal article |
| Hizkuntza: | English |
| Argitaratua: |
2023
|
| Gaiak: | |
| Sarrera elektronikoa: | https://scholar.dlu.edu.vn/handle/123456789/2079 |
| Etiketak: |
Etiketa erantsi
Etiketarik gabe, Izan zaitez lehena erregistro honi etiketa jartzen!
|
| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
|---|