Principles of semiconductor devices
The current gain capability of a Field-Effect-Transistor (FET) is easily explained by the fact that no gate current is required to maintain the inversion layer and the resulting current between drain and source. The device has therefore an infinite current gain in DC. The current gain is inversely p...
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| Päätekijä: | |
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| Aineistotyyppi: | Kirja |
| Kieli: | Undetermined |
| Julkaistu: |
2011
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| Thư viện lưu trữ: | Trung tâm Học liệu Trường Đại học Cần Thơ |
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