Principles of semiconductor devices

The current gain capability of a Field-Effect-Transistor (FET) is easily explained by the fact that no gate current is required to maintain the inversion layer and the resulting current between drain and source. The device has therefore an infinite current gain in DC. The current gain is inversely p...

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Hlavní autor:	Zeghbroeck, Van Bart
Médium:	Kniha
Jazyk:	Undetermined
Vydáno:	2011
Témata:	Electrical engineering,Kỹ thuật điện Materials.,Vật liệu.
Tagy:	Přidat tag Žádné tagy, Buďte první, kdo otaguje tento záznam!

Thư viện lưu trữ:	Trung tâm Học liệu Trường Đại học Cần Thơ

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Principles of semiconductor devices

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