Principles of semiconductor devices

The current gain capability of a Field-Effect-Transistor (FET) is easily explained by the fact that no gate current is required to maintain the inversion layer and the resulting current between drain and source. The device has therefore an infinite current gain in DC. The current gain is inversely p...

詳細記述

保存先:

書誌詳細
第一著者:	Zeghbroeck, Van Bart
フォーマット:	図書
言語:	Undetermined
出版事項:	2011
主題:	Electrical engineering,Kỹ thuật điện Materials.,Vật liệu.
タグ:	タグ追加タグなし, このレコードへの初めてのタグを付けませんか!

Thư viện lưu trữ:	Trung tâm Học liệu Trường Đại học Cần Thơ

このレコードへの初めてのコメントを付けませんか!

Notice: fwrite(): write of 697 bytes failed with errno=28 No space left on device in C:\vufind\module\VuFind\src\VuFind\Session\File.php on line 152
Cannot write session to C:\Windows\TEMP\vufind_sessions/sess_hfkfa83vda3l89rnsk2stvkhd1
Warning: session_write_close(): Failed to write session data using user defined save handler. (session.save_path: \xampp\tmp) in C:\vufind\vendor\laminas\laminas-session\src\SessionManager.php on line 235

Principles of semiconductor devices

類似資料