Principles of semiconductor devices

The current gain capability of a Field-Effect-Transistor (FET) is easily explained by the fact that no gate current is required to maintain the inversion layer and the resulting current between drain and source. The device has therefore an infinite current gain in DC. The current gain is inversely p...

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Príomhúdar:	Zeghbroeck, Van Bart
Formáid:	Leabhar
Teanga:	Undetermined
Foilsithe:	2011
Ábhair:	Electrical engineering,Kỹ thuật điện Materials.,Vật liệu.
Clibeanna:	Cuir Clib Leis Gan Chlibeanna, Bí ar an gcéad duine leis an taifead seo a chlibeáil!

Thư viện lưu trữ:	Trung tâm Học liệu Trường Đại học Cần Thơ


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008	210402s9999 xx 000 0 und d
082			\|a 621.38152
082			\|b Z44
100			\|a Zeghbroeck, Van Bart
245		0	\|a Principles of semiconductor devices
245		0	\|c Van Bart Zeghbroeck
260			\|c 2011
520			\|a The current gain capability of a Field-Effect-Transistor (FET) is easily explained by the fact that no gate current is required to maintain the inversion layer and the resulting current between drain and source. The device has therefore an infinite current gain in DC. The current gain is inversely proportional to the signal frequency, reaching unity current gain at the transit frequency
526			\|a Vật lý bán dẫn
526			\|b TN398
650			\|a Electrical engineering,Kỹ thuật điện
650			\|x Materials.,Vật liệu.
910			\|a Tuyến
980			\|a Trung tâm Học liệu Trường Đại học Cần Thơ

Principles of semiconductor devices

Míreanna Comhchosúla