Principles of semiconductor devices

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Principles of semiconductor devices

The current gain capability of a Field-Effect-Transistor (FET) is easily explained by the fact that no gate current is required to maintain the inversion layer and the resulting current between drain and source. The device has therefore an infinite current gain in DC. The current gain is inversely p...

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Bibliografske podrobnosti
Glavni avtor:	Zeghbroeck, Van Bart
Format:	Knjiga
Jezik:	Undetermined
Izdano:	2011
Teme:	Electrical engineering,Kỹ thuật điện Materials.,Vật liệu.
Oznake:	Označite Brez oznak, prvi označite!

Thư viện lưu trữ:	Trung tâm Học liệu Trường Đại học Cần Thơ

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