Principles of semiconductor devices

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Principles of semiconductor devices

The current gain capability of a Field-Effect-Transistor (FET) is easily explained by the fact that no gate current is required to maintain the inversion layer and the resulting current between drain and source. The device has therefore an infinite current gain in DC. The current gain is inversely p...

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书目详细资料
主要作者:	Zeghbroeck, Van Bart
格式:	图书
语言:	Undetermined
出版:	2011
主题:	Electrical engineering,Kỹ thuật điện Materials.,Vật liệu.
标签:	添加标签没有标签, 成为第一个标记此记录!

Thư viện lưu trữ:	Trung tâm Học liệu Trường Đại học Cần Thơ

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