Principles of semiconductor devices

The current gain capability of a Field-Effect-Transistor (FET) is easily explained by the fact that no gate current is required to maintain the inversion layer and the resulting current between drain and source. The device has therefore an infinite current gain in DC. The current gain is inversely p...

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Xehetasun bibliografikoak
Egile nagusia: Zeghbroeck, Van Bart
Formatua: Liburua
Hizkuntza:Undetermined
Argitaratua: 2011
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Thư viện lưu trữ: Trung tâm Học liệu Trường Đại học Cần Thơ

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