Principles of semiconductor devices
The current gain capability of a Field-Effect-Transistor (FET) is easily explained by the fact that no gate current is required to maintain the inversion layer and the resulting current between drain and source. The device has therefore an infinite current gain in DC. The current gain is inversely p...
Сохранить в:
| Главный автор: | Zeghbroeck, Van Bart |
|---|---|
| Формат: | |
| Язык: | Undetermined |
| Опубликовано: |
2011
|
| Предметы: | |
| Метки: |
Добавить метку
Нет меток, Требуется 1-ая метка записи!
|
| Thư viện lưu trữ: | Trung tâm Học liệu Trường Đại học Cần Thơ |
|---|
Схожие документы
-
Principles of electronic materials and devices
по: Kasap, S. O.
Опубликовано: (2006) -
Principles of electronic materials and devices, 3/e
по: Kasap, S. O.
Опубликовано: (2006) -
Principles of electronics materials and devices
по: S. O. Kasap
Опубликовано: (2002) -
Principles of electronic material and devices
по: Kasap, S. O.
Опубликовано: (2002) -
Principle of electronic materials and devices
по: Kasap, S. O.
Опубликовано: (2006)