Principles of semiconductor devices

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Principles of semiconductor devices

The current gain capability of a Field-Effect-Transistor (FET) is easily explained by the fact that no gate current is required to maintain the inversion layer and the resulting current between drain and source. The device has therefore an infinite current gain in DC. The current gain is inversely p...

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Detalles Bibliográficos
Autor Principal:	Zeghbroeck, Van Bart
Formato:	Libro
Idioma:	Undetermined
Publicado:	2011
Những chủ đề:	Electrical engineering,Kỹ thuật điện Materials.,Vật liệu.
Các nhãn:	Engadir etiqueta Sen Etiquetas, Sexa o primeiro en etiquetar este rexistro!

Thư viện lưu trữ:	Trung tâm Học liệu Trường Đại học Cần Thơ

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