Principles of semiconductor devices

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Principles of semiconductor devices

The current gain capability of a Field-Effect-Transistor (FET) is easily explained by the fact that no gate current is required to maintain the inversion layer and the resulting current between drain and source. The device has therefore an infinite current gain in DC. The current gain is inversely p...

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Opis bibliograficzny
1. autor:	Zeghbroeck, Van Bart
Format:	Książka
Język:	Undetermined
Wydane:	2011
Hasła przedmiotowe:	Electrical engineering,Kỹ thuật điện Materials.,Vật liệu.
Etykiety:	Dodaj etykietę Nie ma etykietki, Dołącz pierwszą etykiete!

Thư viện lưu trữ:	Trung tâm Học liệu Trường Đại học Cần Thơ

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