Principles of semiconductor devices

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Principles of semiconductor devices

The current gain capability of a Field-Effect-Transistor (FET) is easily explained by the fact that no gate current is required to maintain the inversion layer and the resulting current between drain and source. The device has therefore an infinite current gain in DC. The current gain is inversely p...

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Bibliografiska uppgifter
Huvudupphovsman:	Zeghbroeck, Van Bart
Materialtyp:	Bok
Språk:	Undetermined
Publicerad:	2011
Ämnen:	Electrical engineering,Kỹ thuật điện Materials.,Vật liệu.
Taggar:	Lägg till en tagg Inga taggar, Lägg till första taggen!

Thư viện lưu trữ:	Trung tâm Học liệu Trường Đại học Cần Thơ

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