Principles of semiconductor devices
The current gain capability of a Field-Effect-Transistor (FET) is easily explained by the fact that no gate current is required to maintain the inversion layer and the resulting current between drain and source. The device has therefore an infinite current gain in DC. The current gain is inversely p...
Na minha lista:
| Autor principal: | Zeghbroeck, Van Bart |
|---|---|
| Formato: | Livro |
| Idioma: | Undetermined |
| Publicado em: |
2011
|
| Assuntos: | |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|
| Thư viện lưu trữ: | Trung tâm Học liệu Trường Đại học Cần Thơ |
|---|
Registros relacionados
-
Principles of electronic materials and devices
por: Kasap, S. O.
Publicado em: (2006) -
Principles of electronic materials and devices, 3/e
por: Kasap, S. O.
Publicado em: (2006) -
Principles of electronics materials and devices
por: S. O. Kasap
Publicado em: (2002) -
Principles of electronic material and devices
por: Kasap, S. O.
Publicado em: (2002) -
Principle of electronic materials and devices
por: Kasap, S. O.
Publicado em: (2006)