Principles of semiconductor devices

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Principles of semiconductor devices

The current gain capability of a Field-Effect-Transistor (FET) is easily explained by the fact that no gate current is required to maintain the inversion layer and the resulting current between drain and source. The device has therefore an infinite current gain in DC. The current gain is inversely p...

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Detalhes bibliográficos
Autor principal:	Zeghbroeck, Van Bart
Formato:	Livro
Idioma:	Undetermined
Publicado em:	2011
Assuntos:	Electrical engineering,Kỹ thuật điện Materials.,Vật liệu.
Tags:	Adicionar Tag Sem tags, seja o primeiro a adicionar uma tag!

Thư viện lưu trữ:	Trung tâm Học liệu Trường Đại học Cần Thơ

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