Principles of semiconductor devices
The current gain capability of a Field-Effect-Transistor (FET) is easily explained by the fact that no gate current is required to maintain the inversion layer and the resulting current between drain and source. The device has therefore an infinite current gain in DC. The current gain is inversely p...
保存先:
| 第一著者: | Zeghbroeck, Van Bart |
|---|---|
| フォーマット: | 図書 |
| 言語: | Undetermined |
| 出版事項: |
2011
|
| 主題: | |
| タグ: |
タグ追加
タグなし, このレコードへの初めてのタグを付けませんか!
|
| Thư viện lưu trữ: | Trung tâm Học liệu Trường Đại học Cần Thơ |
|---|
類似資料
-
Principles of electronic materials and devices
著者:: Kasap, S. O.
出版事項: (2006) -
Principles of electronic materials and devices, 3/e
著者:: Kasap, S. O.
出版事項: (2006) -
Principles of electronics materials and devices
著者:: S. O. Kasap
出版事項: (2002) -
Principles of electronic material and devices
著者:: Kasap, S. O.
出版事項: (2002) -
Principle of electronic materials and devices
著者:: Kasap, S. O.
出版事項: (2006)