Principles of semiconductor devices
The current gain capability of a Field-Effect-Transistor (FET) is easily explained by the fact that no gate current is required to maintain the inversion layer and the resulting current between drain and source. The device has therefore an infinite current gain in DC. The current gain is inversely p...
Guardado en:
| Autor principal: | |
|---|---|
| Formato: | Libro |
| Lenguaje: | Undetermined |
| Publicado: |
2011
|
| Materias: | |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| Thư viện lưu trữ: | Trung tâm Học liệu Trường Đại học Cần Thơ |
|---|