Transport, correlation, and structural defects /
Sparad:
| Övriga upphovsmän: | Fritzsche, Hellmut. |
|---|---|
| Materialtyp: | Sách giấy |
| Publicerad: |
Singapore ; Teaneck, N.J. :
World Scientific,
c1990.
|
| Serie: | Advances in disordered semiconductors ;
v. 3 |
| Ämnen: | |
| Taggar: |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
|---|
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