Modified trench MOS barrier schottky (TMBS) rectifier /

समान संसाधन

• Effects of High Temperatures on Cell Reading, Programming, and Erasing of Schottky Barrier Charge-Trapping Memories
  द्वारा: Jr-Jie Tsai, और अन्य
  प्रकाशित: (2023)
• Jorgensen's inequality for classical Schottky groups of real type II /
  द्वारा: Sato, Hiroki.
• Schottky barrier silicon nanowire SONOS memory with ultralow programming and erasing voltages
  द्वारा: Chun-Hsing Shih, और अन्य
  प्रकाशित: (2024)
• Transverse scaling of Schottky barrier charge-trapping cells for energy-efficient applications
  द्वारा: Hung-Jin Teng, और अन्य
  प्रकाशित: (2021)
• A source-side injection lucky electron model for Schottky barrier metal-oxide-semiconductor devices
  द्वारा: Chun-Hsing Shih, और अन्य
  प्रकाशित: (2024)