Different roles and designs of hetero-gate dielectric in single- and double-gate tunnel field-effect transistors
The hetero-gate dielectric (HGD) engineering not only suppresses the ambipolar current but also enhances the on-current of tunnel field-effect transistors (TFETs). Based on two-dimensional device simulations, we examined the roles and designs of hetero-gate dielectric structure in single- and double...
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| Główni autorzy: | , , , |
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| Format: | Journal article |
| Język: | English |
| Wydane: |
Dalat University
2023
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| Hasła przedmiotowe: | |
| Dostęp online: | http://scholar.dlu.edu.vn/handle/123456789/2071 |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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