Influence of hetero-gate dielectrics on short-channel effects in scaled tunnel field-effect transistors
In this study, we examined the influence of using hetero-gate dielectrics (HGDs) on the short-channel effects (SCEs) in scaled tunnel field-effect transistors (TFETs). For bulk TFETs, the short-channel performance is not influenced by the HGD engineering because the SCEs are caused by the tunneling...
Đã lưu trong:
| Những tác giả chính: | , , , |
|---|---|
| 格式: | Journal article |
| 语言: | English |
| 出版: |
Elsevier
2024
|
| 主题: | |
| 在线阅读: | https://scholar.dlu.edu.vn/handle/123456789/3289 |
| 标签: |
添加标签
没有标签, 成为第一个标记此记录!
|
| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
|---|