Different roles and designs of hetero-gate dielectric in single- and double-gate tunnel field-effect transistors

Different roles and designs of hetero-gate dielectric in single- and double-gate tunnel field-effect transistors

The hetero-gate dielectric (HGD) engineering not only suppresses the ambipolar current but also enhances the on-current of tunnel field-effect transistors (TFETs). Based on two-dimensional device simulations, we examined the roles and designs of hetero-gate dielectric structure in single- and double...

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Những tác giả chính: Nguyễn, Đăng Chiến, Huynh Thi Hong Tham, Luu The Vinh, Chun-Hsing Shih
Định dạng: Journal article
Ngôn ngữ:English
Được phát hành: Dalat University 2023
Những chủ đề:
Band-to-band tunneling
Double-gate transistor
Hetero-gate dielectric
High-k gate-insulator
Tunnel FET
Truy cập trực tuyến:http://scholar.dlu.edu.vn/handle/123456789/2071
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Thư viện lưu trữ: Thư viện Trường Đại học Đà Lạt
id oai:scholar.dlu.edu.vn:123456789-2071
record_format dspace
institution Thư viện Trường Đại học Đà Lạt
collection Thư viện số
language English
topic Band-to-band tunneling
Double-gate transistor
Hetero-gate dielectric
High-k gate-insulator
Tunnel FET
spellingShingle Band-to-band tunneling
Double-gate transistor
Hetero-gate dielectric
High-k gate-insulator
Tunnel FET
Nguyễn, Đăng Chiến
Huynh Thi Hong Tham
Luu The Vinh
Chun-Hsing Shih
Different roles and designs of hetero-gate dielectric in single- and double-gate tunnel field-effect transistors
description The hetero-gate dielectric (HGD) engineering not only suppresses the ambipolar current but also enhances the on-current of tunnel field-effect transistors (TFETs). Based on two-dimensional device simulations, we examined the roles and designs of hetero-gate dielectric structure in single- and double-gate TFETs. Proper comparisons and analyses show that the roles and designs of source-side dielectric heterojunction are almost similar, whereas those of drain-side dielectric heterojunction are extremely different in single- and double-gate TFETs. For both the device structures, the optimal position of source-side dielectric heterojunction does not depend on the ratio of low/high-k equivalent oxide thicknesses (EOTs). When increasing the EOT ratio, the on-current enhancement by optimized source-side dielectric heterojunction is first increased (EOT ratio < 12) and then saturated (EOT ratio > 12). The role of drain-side dielectric heterojunction in enhancing on-current is limited in double-gate TFETs (every EOT ratio), but significant in single-gate devices (EOT ratio < 12). For EOT ratios < 12, the optimal position of drain-side dielectric heterojunction in double-gate TFETs is around 2-3 nm farther from the source compared to that in single-gate TFETs. For EOT ratios > 12, the optimal position of drain-side dielectric heterojunction in double-gate TFETs is not dependent on the EOT ratio, but that in single-gate TFETs is. Those differences are due to the difference in the depths of local potential wells in two TFET structures.
format Journal article
author Nguyễn, Đăng Chiến
Huynh Thi Hong Tham
Luu The Vinh
Chun-Hsing Shih
author_facet Nguyễn, Đăng Chiến
Huynh Thi Hong Tham
Luu The Vinh
Chun-Hsing Shih
author_sort Nguyễn, Đăng Chiến
title Different roles and designs of hetero-gate dielectric in single- and double-gate tunnel field-effect transistors
title_short Different roles and designs of hetero-gate dielectric in single- and double-gate tunnel field-effect transistors
title_full Different roles and designs of hetero-gate dielectric in single- and double-gate tunnel field-effect transistors
title_fullStr Different roles and designs of hetero-gate dielectric in single- and double-gate tunnel field-effect transistors
title_full_unstemmed Different roles and designs of hetero-gate dielectric in single- and double-gate tunnel field-effect transistors
title_sort different roles and designs of hetero-gate dielectric in single- and double-gate tunnel field-effect transistors
publisher Dalat University
publishDate 2023
url http://scholar.dlu.edu.vn/handle/123456789/2071
_version_ 1768306345748987904
spelling oai:scholar.dlu.edu.vn:123456789-20712023-04-28T08:32:56Z Different roles and designs of hetero-gate dielectric in single- and double-gate tunnel field-effect transistors Nguyễn, Đăng Chiến Huynh Thi Hong Tham Luu The Vinh Chun-Hsing Shih Band-to-band tunneling Double-gate transistor Hetero-gate dielectric High-k gate-insulator Tunnel FET The hetero-gate dielectric (HGD) engineering not only suppresses the ambipolar current but also enhances the on-current of tunnel field-effect transistors (TFETs). Based on two-dimensional device simulations, we examined the roles and designs of hetero-gate dielectric structure in single- and double-gate TFETs. Proper comparisons and analyses show that the roles and designs of source-side dielectric heterojunction are almost similar, whereas those of drain-side dielectric heterojunction are extremely different in single- and double-gate TFETs. For both the device structures, the optimal position of source-side dielectric heterojunction does not depend on the ratio of low/high-k equivalent oxide thicknesses (EOTs). When increasing the EOT ratio, the on-current enhancement by optimized source-side dielectric heterojunction is first increased (EOT ratio < 12) and then saturated (EOT ratio > 12). The role of drain-side dielectric heterojunction in enhancing on-current is limited in double-gate TFETs (every EOT ratio), but significant in single-gate devices (EOT ratio < 12). For EOT ratios < 12, the optimal position of drain-side dielectric heterojunction in double-gate TFETs is around 2-3 nm farther from the source compared to that in single-gate TFETs. For EOT ratios > 12, the optimal position of drain-side dielectric heterojunction in double-gate TFETs is not dependent on the EOT ratio, but that in single-gate TFETs is. 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