Different roles and designs of hetero-gate dielectric in single- and double-gate tunnel field-effect transistors

The hetero-gate dielectric (HGD) engineering not only suppresses the ambipolar current but also enhances the on-current of tunnel field-effect transistors (TFETs). Based on two-dimensional device simulations, we examined the roles and designs of hetero-gate dielectric structure in single- and double...

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Bibliografski detalji
Glavni autori: Nguyễn, Đăng Chiến, Huynh Thi Hong Tham, Luu The Vinh, Chun-Hsing Shih
Format: Journal article
Jezik:English
Izdano: Dalat University 2023
Teme:
Online pristup:http://scholar.dlu.edu.vn/handle/123456789/2071
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