Effects of High Temperatures on Cell Reading, Programming, and Erasing of Schottky Barrier Charge-Trapping Memories
This paper examines the temperature effect of Schottky barrier source/drain charge-trapping memories. The current-voltage curves and programming/erasing characteristics are experimentally investigated at room temperature and higher 85 °C and 125 °C. 2-D device simulations were performed to elucidate...
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2023
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oai:scholar.dlu.edu.vn:123456789-20732023-12-13T04:20:34Z Effects of High Temperatures on Cell Reading, Programming, and Erasing of Schottky Barrier Charge-Trapping Memories Jr-Jie Tsai Wen-Fa Wu Yu-Hsuan Chen Hung-Jin Teng Nguyễn, Đăng Chiến Chun-Hsing Shih Schottky barrier charge-trapping memory temperature effect This paper examines the temperature effect of Schottky barrier source/drain charge-trapping memories. The current-voltage curves and programming/erasing characteristics are experimentally investigated at room temperature and higher 85 °C and 125 °C. 2-D device simulations were performed to elucidate the physical mechanisms of Schottky barrier cell devices at high temperatures. For Schottky barrier charge-trapping cells, two different mechanisms of ambipolar conduction are classified: 1) thermionic emission and 2) Schottky barrier tunneling. The thermionic emission is susceptible to variations of high temperatures, leading to considerable shifts in logarithmic scale off-state drain-currents at low gate voltages. However, at adequately large gate voltages, the Schottky barrier tunneling plays a key role in contributing drain currents. The Schottky barriers and associated tunneling are relatively insensitive to the variations of device temperatures, preserving favorable temperature-insensitive programming and erasing Schottky barrier charge-trapping cells for use in the high-temperature automotive industry. 216 111061 2023-04-28T09:04:24Z 2023-04-28T09:04:24Z 2019 Journal article Bài báo đăng trên tạp chí thuộc ISI, bao gồm book chapter https://scholar.dlu.edu.vn/handle/123456789/2073 10.1109/TDMR.2019.2916483 en Microelectronic Engineering 0167-9317 |
| institution |
Thư viện Trường Đại học Đà Lạt |
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Thư viện số |
| language |
English |
| topic |
Schottky barrier charge-trapping memory temperature effect |
| spellingShingle |
Schottky barrier charge-trapping memory temperature effect Jr-Jie Tsai Wen-Fa Wu Yu-Hsuan Chen Hung-Jin Teng Nguyễn, Đăng Chiến Chun-Hsing Shih Effects of High Temperatures on Cell Reading, Programming, and Erasing of Schottky Barrier Charge-Trapping Memories |
| description |
This paper examines the temperature effect of Schottky barrier source/drain charge-trapping memories. The current-voltage curves and programming/erasing characteristics are experimentally investigated at room temperature and higher 85 °C and 125 °C. 2-D device simulations were performed to elucidate the physical mechanisms of Schottky barrier cell devices at high temperatures. For Schottky barrier charge-trapping cells, two different mechanisms of ambipolar conduction are classified: 1) thermionic emission and 2) Schottky barrier tunneling. The thermionic emission is susceptible to variations of high temperatures, leading to considerable shifts in logarithmic scale off-state drain-currents at low gate voltages. However, at adequately large gate voltages, the Schottky barrier tunneling plays a key role in contributing drain currents. The Schottky barriers and associated tunneling are relatively insensitive to the variations of device temperatures, preserving favorable temperature-insensitive programming and erasing Schottky barrier charge-trapping cells for use in the high-temperature automotive industry. |
| format |
Journal article |
| author |
Jr-Jie Tsai Wen-Fa Wu Yu-Hsuan Chen Hung-Jin Teng Nguyễn, Đăng Chiến Chun-Hsing Shih |
| author_facet |
Jr-Jie Tsai Wen-Fa Wu Yu-Hsuan Chen Hung-Jin Teng Nguyễn, Đăng Chiến Chun-Hsing Shih |
| author_sort |
Jr-Jie Tsai |
| title |
Effects of High Temperatures on Cell Reading, Programming, and Erasing of Schottky Barrier Charge-Trapping Memories |
| title_short |
Effects of High Temperatures on Cell Reading, Programming, and Erasing of Schottky Barrier Charge-Trapping Memories |
| title_full |
Effects of High Temperatures on Cell Reading, Programming, and Erasing of Schottky Barrier Charge-Trapping Memories |
| title_fullStr |
Effects of High Temperatures on Cell Reading, Programming, and Erasing of Schottky Barrier Charge-Trapping Memories |
| title_full_unstemmed |
Effects of High Temperatures on Cell Reading, Programming, and Erasing of Schottky Barrier Charge-Trapping Memories |
| title_sort |
effects of high temperatures on cell reading, programming, and erasing of schottky barrier charge-trapping memories |
| publishDate |
2023 |
| url |
https://scholar.dlu.edu.vn/handle/123456789/2073 |
| _version_ |
1785973033283878912 |