Effects of High Temperatures on Cell Reading, Programming, and Erasing of Schottky Barrier Charge-Trapping Memories

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Effects of High Temperatures on Cell Reading, Programming, and Erasing of Schottky Barrier Charge-Trapping Memories

This paper examines the temperature effect of Schottky barrier source/drain charge-trapping memories. The current-voltage curves and programming/erasing characteristics are experimentally investigated at room temperature and higher 85 °C and 125 °C. 2-D device simulations were performed to elucidate...

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Những tác giả chính:	Jr-Jie Tsai, Wen-Fa Wu, Yu-Hsuan Chen, Hung-Jin Teng, Nguyễn, Đăng Chiến, Chun-Hsing Shih
Định dạng:	Journal article
Ngôn ngữ:	English
Được phát hành:	2023
Những chủ đề:	Schottky barrier charge-trapping memory temperature effect
Truy cập trực tuyến:	https://scholar.dlu.edu.vn/handle/123456789/2073
Các nhãn:	Thêm thẻ Không có thẻ, Là người đầu tiên thẻ bản ghi này!

Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

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