Short-channel effect and device design of extremely scaled tunnel field-effect transistors
For serving as ideal switching devices in future energy-efficient applications, scaling down the channel lengths of Tunnel-Field Effect Transistors (TFETs) is essential to follow the pace of Si-based CMOS technologies. This work elucidates the short-channel mechanisms and the role of the drain in ex...
Đã lưu trong:
| Những tác giả chính: | , |
|---|---|
| Formáid: | Journal article |
| Teanga: | English |
| Foilsithe: |
2023
|
| Ábhair: | |
| Rochtain Ar Líne: | https://scholar.dlu.edu.vn/handle/123456789/2082 |
| Clibeanna: |
Cuir Clib Leis
Gan Chlibeanna, Bí ar an gcéad duine leis an taifead seo a chlibeáil!
|
| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
|---|
Bí ar an gcéad duine le tuairim a scríobh!