Different scalabilities of N- and P-Type tunnel field-effect transistors with Si/SiGe heterojunctions
The dimensional scaling of tunnel field-effect transistors (TFETs) is an indispensable issue to make them competitive with traditional metal-oxide-semiconductor field-effect transistors (MOSFETs). This paper elucidates the scalabilities of very potential TFETs utilizing Si/SiGe heterojunctions opera...
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| Autores principales: | , , , |
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| Formato: | Conference paper |
| Lenguaje: | English |
| Publicado: |
IEEE Publishing
2024
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| Materias: | |
| Acceso en línea: | https://scholar.dlu.edu.vn/handle/123456789/3312 |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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