Short-channel effect and device design of extremely scaled tunnel field-effect transistors
For serving as ideal switching devices in future energy-efficient applications, scaling down the channel lengths of Tunnel-Field Effect Transistors (TFETs) is essential to follow the pace of Si-based CMOS technologies. This work elucidates the short-channel mechanisms and the role of the drain in ex...
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| Главные авторы: | , |
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| Формат: | Journal article |
| Язык: | English |
| Опубликовано: |
2023
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| Предметы: | |
| Online-ссылка: | https://scholar.dlu.edu.vn/handle/123456789/2082 |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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