Effects of source doping profile on device characteristics of lateral and vertical tunnel field-effect transistors
The source doping engineering, the low bandgap material and the vertical tunneling structure have recently been considered as most effective techniques to resolve the on-current issue in tunnel field-effect transistors (TFETs). In this paper, the effects of source doping profile, including the conce...
সংরক্ষণ করুন:
| প্রধান লেখক: | , |
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| বিন্যাস: | Journal article |
| ভাষা: | English |
| প্রকাশিত: |
2023
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| বিষয়গুলি: | |
| অনলাইন ব্যবহার করুন: | https://scholar.dlu.edu.vn/handle/123456789/2083 |
| ট্যাগগুলো: |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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