Effects of source doping profile on device characteristics of lateral and vertical tunnel field-effect transistors

Effects of source doping profile on device characteristics of lateral and vertical tunnel field-effect transistors

The source doping engineering, the low bandgap material and the vertical tunneling structure have recently been considered as most effective techniques to resolve the on-current issue in tunnel field-effect transistors (TFETs). In this paper, the effects of source doping profile, including the conce...

Mô tả đầy đủ

Đã lưu trong:
Chi tiết về thư mục
Những tác giả chính: Luu The Vinh, Nguyễn, Đăng Chiến
Định dạng: Journal article
Ngôn ngữ:English
Được phát hành: 2023
Những chủ đề:
Source engineering
source doping effect
lateral tunneling
vertical tunneling
tunnel field-effect transistor
Truy cập trực tuyến:https://scholar.dlu.edu.vn/handle/123456789/2083
Các nhãn: Thêm thẻ
Không có thẻ, Là người đầu tiên thẻ bản ghi này!
Thư viện lưu trữ: Thư viện Trường Đại học Đà Lạt
id oai:scholar.dlu.edu.vn:123456789-2083
record_format dspace
institution Thư viện Trường Đại học Đà Lạt
collection Thư viện số
language English
topic Source engineering
source doping effect
lateral tunneling
vertical tunneling
tunnel field-effect transistor
spellingShingle Source engineering
source doping effect
lateral tunneling
vertical tunneling
tunnel field-effect transistor
Luu The Vinh
Nguyễn, Đăng Chiến
Effects of source doping profile on device characteristics of lateral and vertical tunnel field-effect transistors
description The source doping engineering, the low bandgap material and the vertical tunneling structure have recently been considered as most effective techniques to resolve the on-current issue in tunnel field-effect transistors (TFETs). In this paper, the effects of source doping profile, including the concentration and gradient, on the device characteristics are adequately elucidated in lateral and vertical TFETs using low bandgap germanium to allow a comprehensive comparison between the two major TFET architectures for the first time. Similar dependences of the on-current on the source concentration are observed in lateral and vertical TFETs, except that the on-current of vertical TFETs is always greater than that of lateral TFETs approximately one order of magnitude. With different contributions of the lateral and vertical tunneling components in the subthreshold region, the subthreshold swing of vertical TFETs first decreases at small concentrations, then increases at medium values, and finally decreases again at high concentrations, whereas that of lateral counterparts always decreases exponentially with increase in the source concentration. The on-current of lateral TFETs is significantly decreased, while that of vertical TFETs is almost invariable with increasing the source doping gradient. With competitive advantages of the vertical TFET architecture in on-current, subthreshold swing and device fabrication, vertical TFETs using low bandgap semiconductors are promising for use in low power applications.
format Journal article
author Luu The Vinh
Nguyễn, Đăng Chiến
author_facet Luu The Vinh
Nguyễn, Đăng Chiến
author_sort Luu The Vinh
title Effects of source doping profile on device characteristics of lateral and vertical tunnel field-effect transistors
title_short Effects of source doping profile on device characteristics of lateral and vertical tunnel field-effect transistors
title_full Effects of source doping profile on device characteristics of lateral and vertical tunnel field-effect transistors
title_fullStr Effects of source doping profile on device characteristics of lateral and vertical tunnel field-effect transistors
title_full_unstemmed Effects of source doping profile on device characteristics of lateral and vertical tunnel field-effect transistors
title_sort effects of source doping profile on device characteristics of lateral and vertical tunnel field-effect transistors
publishDate 2023
url https://scholar.dlu.edu.vn/handle/123456789/2083
_version_ 1785973040234889216
spelling oai:scholar.dlu.edu.vn:123456789-20832023-12-13T04:19:10Z Effects of source doping profile on device characteristics of lateral and vertical tunnel field-effect transistors Luu The Vinh Nguyễn, Đăng Chiến Source engineering source doping effect lateral tunneling vertical tunneling tunnel field-effect transistor The source doping engineering, the low bandgap material and the vertical tunneling structure have recently been considered as most effective techniques to resolve the on-current issue in tunnel field-effect transistors (TFETs). In this paper, the effects of source doping profile, including the concentration and gradient, on the device characteristics are adequately elucidated in lateral and vertical TFETs using low bandgap germanium to allow a comprehensive comparison between the two major TFET architectures for the first time. Similar dependences of the on-current on the source concentration are observed in lateral and vertical TFETs, except that the on-current of vertical TFETs is always greater than that of lateral TFETs approximately one order of magnitude. With different contributions of the lateral and vertical tunneling components in the subthreshold region, the subthreshold swing of vertical TFETs first decreases at small concentrations, then increases at medium values, and finally decreases again at high concentrations, whereas that of lateral counterparts always decreases exponentially with increase in the source concentration. The on-current of lateral TFETs is significantly decreased, while that of vertical TFETs is almost invariable with increasing the source doping gradient. With competitive advantages of the vertical TFET architecture in on-current, subthreshold swing and device fabrication, vertical TFETs using low bandgap semiconductors are promising for use in low power applications. 53 85-95 2023-04-28T12:17:41Z 2023-04-28T12:17:41Z 2015 Journal article Bài báo đăng trên tạp chí trong nước (có ISSN), bao gồm book chapter https://scholar.dlu.edu.vn/handle/123456789/2083 10.15625/0866-708X/53/1/3805 en Vietnam Journal of Science and Technology 0866-708X 1. W. Y. Choi, B.-G. Park, J. D. Lee, and T.-J. K. Liu, “Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec,” IEEE Electron Device Lett. 28 (2007) 743-745. 2. D. Esseni, M. Guglielmini, B. Kapidani, T. Rollo, and M. Alioto, “Tunnel FETs for ultralow voltage digital VLSI circuits: Part I – device-circuit interaction and evaluation at device level,” IEEE Trans. Very Large Scale Integr. (VLSI) Syst., in press. 3. W. M. Reddick and G. A. J. Amaratunga, “Silicon surface tunnel transistor,” Appl. Phys. Lett. 67 (1995) 494-496. 4. P.-F. Wang, K. Hilsenbeck, Th. Nirschl, M. Oswald, Ch. Stepper, M. Weis, D. Schmitt-Landsiedel, and W. Hansch, “Complementary tunneling transistor for low power application,” Solid-State Electron. 48 (2004) 2281-2286. 5. N. D. Chien and L. T. Vinh, “Design optimization of extremely short channel graded Si/SiGe heterojunction tunnel field-effect transistors for low power applications,” Journal of Science and Technology (ISSN: 0866-708X) 6 (2013) 757-768. 6. E.-H. Toh, G. H. Wang, G. Samudra, and Y.-C. Yeo, “Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications,” J. Appl. Phys. 103 (2008) 104504-104504-5. 7. N. D. Chien, C.-H. Shih and L. T. Vinh, “Drive current enhancement in tunnel field-effect transistors by graded heterojunction approach,” J. Appl. Phys. 114 (2013) 094507-094507-6 [Erratum 114 (2013) 189901-189901-1]. 8. S. Manti, L. Knoll, M. Schmidt, S. Richter, A. Nichau, S. Trellenkamp, A. Schafer, S. Wirths, S. Blaeser, D. Buca, and Q.-T. Zhao, “Si based tunnel field effect transistors - Recent achievements,” International Conference on Ultimate Integration on Silicon (2013) 15-20. 9. T. Krishnamohan, K. Donghyun, S. Raghunathan, and K. Saraswat, “Double-gate strained-Ge heterostructure tunneling FET (TFET) with record high drive currents and 60mV/dec subthreshold slope,” International Electron Devices Meeting (2008) 1-3. 10. W. Y. Choi and W. Lee, “Hetero-gate-dielectric tunneling field-effect transistors,” IEEE Trans. Electron Devices 57 (2010) 2317-2319. 11. C.-H. Shih and N. D. Chien, “Sub-10-nm tunnel field-effect transistor with graded Si/Ge heterojunction,” IEEE Electron Device Lett. 32 (2011) 1498-1500. 12. O. M. Nayfeh, J. L. Hoyt, D. A. Antoniadis, “Strained-Si1-xGex/Si band-to-band tunneling transistors: impact of tunnel junction germanium composition and doping concentration on switching behavior,” IEEE Trans. Electron Devices 56 (2009) 2264-2269. 13. W. G. Vandenberghe, A. S. Verhulst, G. Groeseneken, B. Soree, and W. Magnus, “Analytical model for a tunnel field-effect transistor,” IEEE Mediterranean Electrotechnical Conference (2008) 923-928. 14. W. Wang, P.-F. Wang, C.-M. Zhang, X. Lin, X.-Y. Liu, Q.-Q. Sun, P. Zhou, and D. W. Zhang, “Design of U-shape channel tunnel FETs with SiGe source regions,” IEEE Trans. Electron Devices 61 (2014) 193-197. 15. C. Hu, “Green transistor as a solution to the IC power crisis,” International Conference on Solid-State and Integrated Circuit Technology (2008) 16-20. 16. P.-F. Wang, T. Nirschl, D. Schmitt-Landsiedel, and W. Hansch “Simulation of the Esaki-tunneling FET,” Solid-State Electron. 47 (2003) 1187-1192. 17. Synopsys MEDICI User’s Manual, Synopsys Inc., Mountain View, CA, 2010. 18. K.-H. Kao, A. S. Verhulst, W. G. Vandenberghe, B. Sorée, G. Groeseneken, and K. D. Meyer, “Direct and indirect band-to-band tunneling in germanium-based TFETs,” IEEE Trans. Electron Devices 59 (2012) 292-301. 19. C.-H. Shih and N. D. Chien, “Design and modeling of line-tunneling field-effect transistors using low-bandgap semiconductors,” IEEE Trans. Electron Devices 61 (2014) 1907-1913. 20. E. O. Kane, “Theory of tunneling,” J. Appl. Phys. 32 (1961) 83-91. 21. C.-H. Shih and N. D. Chien, “Physical operation and device design of short-channel tunnel field-effect transistors with graded silicon-germanium heterojunctions,” J. Appl. Phys. 113 (2013) 134507-134507-7. 22. J. Z. Peng, S. Haddad, J. Hsu, J. Chen, S. Longcor, and C. Chang, “Accurate simulation on band-to-band tunneling induced leakage current using a global non-local model,” International Conference on Solid-State and Integrated Circuit Technology (1995) 141-143. 23. N. D. Chien, L. T. Vinh, N. V. Kien, J.-K. Hsia, T.-S. Kang, and C.-H. Shih, “Proper determination of tunnel model parameters for indirect band-to-band tunneling in compressively strained Si1-xGex TFETs,” IEEE International Symposium on Next-Generation Electronics (2013) 67-70. 24. A. Vandooren, D. Leonelli, R. Rooyackers, A. Hikavyy, K. Devriendt, M. Demand, R. Loo, G. Groeseneken, and C. Huyghebaert “Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction tunnel-FETs,” Solid-State Electron. 83 (2013) 50-55. 25. K. Jeon, “Band-to-band tunnel transistor design and modeling for low power applications,” Ph.D. Dissertation, University of California, Berkeley (2012) 16-17.

Những quyển sách tương tự