Re-evaluating the volume effect in double-gate tunnel field effect transistors

Tunnel field effect transistors (TFETs) exhibit a potential candidate for ultra-low power integrated circuits because the conduction mechanism of band-to-band tunneling (BTBT) allows their subthreshold swing less than the thermal limit of 60 mV/decade at room temperature. Like conventional MOSFETs,...

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Những tác giả chính:	Bui Huu Thai, Chun-Hsing Shih, Nguyễn, Đăng Chiến
Định dạng:	Conference paper
Ngôn ngữ:	English
Được phát hành:	Nhà xuất bản Bách Khoa Hà Nội 2024
Những chủ đề:	Volume effect Thin film transistor Double-gate Band-to-band tunneling Tunnel FET
Truy cập trực tuyến:	https://scholar.dlu.edu.vn/handle/123456789/3286
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spelling	oai:scholar.dlu.edu.vn:123456789-32862024-03-01T23:33:31Z Re-evaluating the volume effect in double-gate tunnel field effect transistors Bui Huu Thai Chun-Hsing Shih Nguyễn, Đăng Chiến Volume effect Thin film transistor Double-gate Band-to-band tunneling Tunnel FET Tunnel field effect transistors (TFETs) exhibit a potential candidate for ultra-low power integrated circuits because the conduction mechanism of band-to-band tunneling (BTBT) allows their subthreshold swing less than the thermal limit of 60 mV/decade at room temperature. Like conventional MOSFETs, scaling down the device size and using the multi-gate structure are important methods to enhance the TFET performance and application. Until now, the volume effect has been considered as the main cause of the on-current degradation when scaling the body thickness of double-gate TFET. In this study, the volume effect was investigated in detail to re-evaluate its impact on the on-current of TFETs. Based on two-dimensional device simulations, it was shown that the volume effect is not responsible for the decrease of on-current with thinning the body down to even several nanometers. This is because the BTBT regions that contribute greatly to the on-current are extremely small and close to the gate-oxide surfaces. The BTBT is generated mostly in the regions with the smallest width of tunnel barrier because the BTBT probability is exponentially decreased with increasing the barrier width. Exactly understanding the impact of the volume effect is necessary to properly study and design scaled TFET devices. 291-295 2024-03-01T02:29:02Z 2024-03-01T02:29:02Z 2023 Conference paper Bài báo đăng trên KYHT trong nước (có ISBN) 9786044717029 https://scholar.dlu.edu.vn/handle/123456789/3286 en Nghiên cứu tối ưu hóa các tham số của thân linh kiện nâng cao đặc tính điện của các transistor hiệu ứng trường xuyên hầm (TFET) The 13th National Conference on Solid-State Physics & Materials Science (SPMS) B2023-DLA-03 1. B. L. Anderson, R. L. Anderson, Fundamentals of Semiconductor Devices, McGraw-Hill (2005). 2. Q. Zhang, W. Zhao, S. A. Seabaugh, IEEE Electron Device Lett., vol. 27, no. 4, pp. 297-300 (2006). 3. W. Y. Choi, B.-G. Park, J. D. Lee, T.-J. K. Liu, IEEE Electron Device Lett., 28, 8, 743-745 (2007). 4. L. Liu, D. Mohata, S. Datta, IEEE Trans. Electron Devices, 59, 4, 902-908 (2012). 5. F. W. Chen, H. Ilatikhameneh, T. A. Ameen, G. Klimeck, R. Rahman, IEEE Electron Device Lett., 38, 1, 130-133 (2017). 6. D. W. Kwon, B.-G. Park, Jpn. J. Appl. Phys., 56, 044201 (2017). 7. N. D. Chien, C.-H. Shih, Superlattices and Microstructures, 100, 857-866 (2016). 8. N. D. Chien, D. T. K. Anh, C.-H. Shih, Journal of Science and Technology, 55, 3, 316-323 (2017). 9. L. Liu, S. Datta, Proceedings of 68th Device Research Conference, Notre Dame, USA, 15-16 (2010). 10. K. Boucart, A. M. Ionescu, Proceedings of European Solid-State Device Research Conference, Montreux, Switzerland, 383-386 (2006). 11. W. C.-Y. Ma, H.-S. Hsu, C.-C. Fang, C.-Y. Jao, T.-H. Liao, Thin Solid Films, 660, 926-930 (2018). 12. M. Zhang, Y. Guo, J. Zhang, J. Yao, J. Chen, Nanoscale Research Letters, 15, 128 (2020). 13. E.-H. Toh, G. H. Wang, L. Chan, G. Samudra, Y.-C. Yeo, Appl. Phys. Lett., 90, 26, 263507 (2007). 14. S. Safa, S. L. Noor, Md. Z. R. Khan, 3rd Int. Conf. on Elec. Eng. & Info. Commu. Tech., 1-4 (2016). 15. G. Gopal, T. Varma, Silicon, 14, 6553–6563 (2022). 16. P. Chaturvedi, N. Goyal, Proceedings of the 8th Int. Caribbean Conf. on Devices, Circuts and Systems, Playa del Carmen, Mexico, 1-4 (2012). 17. Synopsys MEDICI User’s Manual, California: Synopsys Inc. (2020). 18. E. O. Kane, J. Appl. Phys., 31, 1, 83-91 (1961). 19. N. D. Chien, L. T. Vinh, N. V. Kien, J.-K. Hsia, T.-S. Kang, C.-H. Shih, Proceedings of IEEE Int. Symposium on Next-Generation Electronics, Kaohsiung, Taiwan, 67-70 (2013). Nhà xuất bản Bách Khoa Hà Nội Hà Nội, Việt Nam
institution	Thư viện Trường Đại học Đà Lạt
collection	Thư viện số
language	English
topic	Volume effect Thin film transistor Double-gate Band-to-band tunneling Tunnel FET
spellingShingle	Volume effect Thin film transistor Double-gate Band-to-band tunneling Tunnel FET Bui Huu Thai Chun-Hsing Shih Nguyễn, Đăng Chiến Re-evaluating the volume effect in double-gate tunnel field effect transistors
description	Tunnel field effect transistors (TFETs) exhibit a potential candidate for ultra-low power integrated circuits because the conduction mechanism of band-to-band tunneling (BTBT) allows their subthreshold swing less than the thermal limit of 60 mV/decade at room temperature. Like conventional MOSFETs, scaling down the device size and using the multi-gate structure are important methods to enhance the TFET performance and application. Until now, the volume effect has been considered as the main cause of the on-current degradation when scaling the body thickness of double-gate TFET. In this study, the volume effect was investigated in detail to re-evaluate its impact on the on-current of TFETs. Based on two-dimensional device simulations, it was shown that the volume effect is not responsible for the decrease of on-current with thinning the body down to even several nanometers. This is because the BTBT regions that contribute greatly to the on-current are extremely small and close to the gate-oxide surfaces. The BTBT is generated mostly in the regions with the smallest width of tunnel barrier because the BTBT probability is exponentially decreased with increasing the barrier width. Exactly understanding the impact of the volume effect is necessary to properly study and design scaled TFET devices.
format	Conference paper
author	Bui Huu Thai Chun-Hsing Shih Nguyễn, Đăng Chiến
author_facet	Bui Huu Thai Chun-Hsing Shih Nguyễn, Đăng Chiến
author_sort	Bui Huu Thai
title	Re-evaluating the volume effect in double-gate tunnel field effect transistors
title_short	Re-evaluating the volume effect in double-gate tunnel field effect transistors
title_full	Re-evaluating the volume effect in double-gate tunnel field effect transistors
title_fullStr	Re-evaluating the volume effect in double-gate tunnel field effect transistors
title_full_unstemmed	Re-evaluating the volume effect in double-gate tunnel field effect transistors
title_sort	re-evaluating the volume effect in double-gate tunnel field effect transistors
publisher	Nhà xuất bản Bách Khoa Hà Nội
publishDate	2024
url	https://scholar.dlu.edu.vn/handle/123456789/3286
_version_	1798256975857844224

Re-evaluating the volume effect in double-gate tunnel field effect transistors

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