Thin-body effects in double-gate tunnel field-effect transistors

Scaling down the body thickness (Tb) of double-gate tunnel field-effect transistors (DG-TFETs) is helpful in suppressing short-channel effects (SCEs), but it may give rise to thin-body effects (TBEs). Based on 2-D device simulations, this study examines the mechanisms and influences of TBEs in DG-TF...

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Những tác giả chính:	Nguyễn, Đăng Chiến, Bui Huu Thai, Chun-Hsing Shih
Định dạng:	Journal article
Ngôn ngữ:	English
Được phát hành:	IOP Publishing 2024
Những chủ đề:	Thin-body effect double-gate band-to-band tunneling tunnel field-effect transistor
Truy cập trực tuyến:	https://scholar.dlu.edu.vn/handle/123456789/3287
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id	oai:scholar.dlu.edu.vn:123456789-3287
record_format	dspace
institution	Thư viện Trường Đại học Đà Lạt
collection	Thư viện số
language	English
topic	Thin-body effect double-gate band-to-band tunneling tunnel field-effect transistor
spellingShingle	Thin-body effect double-gate band-to-band tunneling tunnel field-effect transistor Nguyễn, Đăng Chiến Bui Huu Thai Chun-Hsing Shih Thin-body effects in double-gate tunnel field-effect transistors
description	Scaling down the body thickness (Tb) of double-gate tunnel field-effect transistors (DG-TFETs) is helpful in suppressing short-channel effects (SCEs), but it may give rise to thin-body effects (TBEs). Based on 2-D device simulations, this study examines the mechanisms and influences of TBEs in DG-TFETs as Tb is scaled down. Differently from previous beliefs, the on-current degradation in thin-body DG-TFETs is not mainly caused by the volume effect, but rather by a newly defined TBE named lateralization effect. This is because the lateralization of tunneling direction significantly increases tunnel width, whereas the reduction of tunneling volume is quite limited due to narrow tunneling regions. To study the Tb-dependence of current, therefore, the vertical tunneling has to be taken into consideration. When considered as a TBE, the fringing field effect caused by reduction in Tb is not significant in degrading the on-current of thin-body DG-TFETs because the narrow tunneling regions are strongly gate-controlled. The only TBE that enhances the on-current is the coupling effect, but its role is only significant for low-bandgap bodies in which the coupling effect can efficiently promote the tunneling towards the body center. Not as previously thought that the quantum confinement effect (QCE) monotonically increased, it even decreases as Tb decreases down to sub-10 nm before turning to increase, thanks to the space sharing between proximate local quantum wells. A comprehensive understanding of the TBEs is useful for providing design insight, especially for determining the optimal Tb to maximize the on-current.
format	Journal article
author	Nguyễn, Đăng Chiến Bui Huu Thai Chun-Hsing Shih
author_facet	Nguyễn, Đăng Chiến Bui Huu Thai Chun-Hsing Shih
author_sort	Nguyễn, Đăng Chiến
title	Thin-body effects in double-gate tunnel field-effect transistors
title_short	Thin-body effects in double-gate tunnel field-effect transistors
title_full	Thin-body effects in double-gate tunnel field-effect transistors
title_fullStr	Thin-body effects in double-gate tunnel field-effect transistors
title_full_unstemmed	Thin-body effects in double-gate tunnel field-effect transistors
title_sort	thin-body effects in double-gate tunnel field-effect transistors
publisher	IOP Publishing
publishDate	2024
url	https://scholar.dlu.edu.vn/handle/123456789/3287
_version_	1798256976440852480
spelling	oai:scholar.dlu.edu.vn:123456789-32872024-03-01T02:47:28Z Thin-body effects in double-gate tunnel field-effect transistors Nguyễn, Đăng Chiến Bui Huu Thai Chun-Hsing Shih Thin-body effect double-gate band-to-band tunneling tunnel field-effect transistor Scaling down the body thickness (Tb) of double-gate tunnel field-effect transistors (DG-TFETs) is helpful in suppressing short-channel effects (SCEs), but it may give rise to thin-body effects (TBEs). Based on 2-D device simulations, this study examines the mechanisms and influences of TBEs in DG-TFETs as Tb is scaled down. Differently from previous beliefs, the on-current degradation in thin-body DG-TFETs is not mainly caused by the volume effect, but rather by a newly defined TBE named lateralization effect. This is because the lateralization of tunneling direction significantly increases tunnel width, whereas the reduction of tunneling volume is quite limited due to narrow tunneling regions. To study the Tb-dependence of current, therefore, the vertical tunneling has to be taken into consideration. When considered as a TBE, the fringing field effect caused by reduction in Tb is not significant in degrading the on-current of thin-body DG-TFETs because the narrow tunneling regions are strongly gate-controlled. The only TBE that enhances the on-current is the coupling effect, but its role is only significant for low-bandgap bodies in which the coupling effect can efficiently promote the tunneling towards the body center. Not as previously thought that the quantum confinement effect (QCE) monotonically increased, it even decreases as Tb decreases down to sub-10 nm before turning to increase, thanks to the space sharing between proximate local quantum wells. A comprehensive understanding of the TBEs is useful for providing design insight, especially for determining the optimal Tb to maximize the on-current. 57 21 215301 2024-03-01T02:47:25Z 2024-03-01T02:47:25Z 2024 Journal article Bài báo đăng trên tạp chí thuộc ISI, bao gồm book chapter https://scholar.dlu.edu.vn/handle/123456789/3287 10.1088/1361-6463/ad2ab1 en Nghiên cứu tối ưu hóa các tham số của thân linh kiện nâng cao đặc tính điện của các transistor hiệu ứng trường xuyên hầm (TFET) Journal of Physics D: Applied Physics 1361-6463 B2023-DLA-03 [1] Bhattacharya S, Tripathi S L and Kamboj V K 2023 Eng. Comput. 39 1415-1458 [2] Kumawat P K, Birla S and Singh N 2023 Mater. Today: Proc. 79 292–296 [3] Glass S, Driesch N, Strangio S, Schulte-Braucks C, Rieger T, Narimani K, Buca D, Mantl S and Zhao Q T 2017 Appl. Phys. Lett. 111 263504 [4] Baek J-M et al. 2022 Solid State Electron. 197 108447 [5] Lu H and Seabaugh A 2014 IEEE J. 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Thin-body effects in double-gate tunnel field-effect transistors

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