Thin-body effects in double-gate tunnel field-effect transistors
Scaling down the body thickness (Tb) of double-gate tunnel field-effect transistors (DG-TFETs) is helpful in suppressing short-channel effects (SCEs), but it may give rise to thin-body effects (TBEs). Based on 2-D device simulations, this study examines the mechanisms and influences of TBEs in DG-TF...
Tallennettuna:
| Päätekijät: | , , |
|---|---|
| Aineistotyyppi: | Journal article |
| Kieli: | English |
| Julkaistu: |
IOP Publishing
2024
|
| Aiheet: | |
| Linkit: | https://scholar.dlu.edu.vn/handle/123456789/3287 |
| Tagit: |
Lisää tagi
Ei tageja, Lisää ensimmäinen tagi!
|
| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
|---|
Lisää ensimmäinen kommentti!