Thin-body effects in double-gate tunnel field-effect transistors
Scaling down the body thickness (Tb) of double-gate tunnel field-effect transistors (DG-TFETs) is helpful in suppressing short-channel effects (SCEs), but it may give rise to thin-body effects (TBEs). Based on 2-D device simulations, this study examines the mechanisms and influences of TBEs in DG-TF...
Đã lưu trong:
Những tác giả chính: | , , |
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Formáid: | Journal article |
Teanga: | English |
Foilsithe: |
IOP Publishing
2024
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Ábhair: | |
Rochtain Ar Líne: | https://scholar.dlu.edu.vn/handle/123456789/3287 |
Clibeanna: |
Cuir Clib Leis
Gan Chlibeanna, Bí ar an gcéad duine leis an taifead seo a chlibeáil!
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Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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