Thin-body effects in double-gate tunnel field-effect transistors
Scaling down the body thickness (Tb) of double-gate tunnel field-effect transistors (DG-TFETs) is helpful in suppressing short-channel effects (SCEs), but it may give rise to thin-body effects (TBEs). Based on 2-D device simulations, this study examines the mechanisms and influences of TBEs in DG-TF...
में बचाया:
| मुख्य लेखकों: | , , |
|---|---|
| स्वरूप: | Journal article |
| भाषा: | English |
| प्रकाशित: |
IOP Publishing
2024
|
| विषय: | |
| ऑनलाइन पहुंच: | https://scholar.dlu.edu.vn/handle/123456789/3287 |
| टैग : |
टैग जोड़ें
कोई टैग नहीं, इस रिकॉर्ड को टैग करने वाले पहले व्यक्ति बनें!
|
| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
|---|
टिप्पणी देने वाले पहले व्यक्ति बनें!