Thin-body effects in double-gate tunnel field-effect transistors
Scaling down the body thickness (Tb) of double-gate tunnel field-effect transistors (DG-TFETs) is helpful in suppressing short-channel effects (SCEs), but it may give rise to thin-body effects (TBEs). Based on 2-D device simulations, this study examines the mechanisms and influences of TBEs in DG-TF...
Salvato in:
| Autori principali: | , , |
|---|---|
| Natura: | Journal article |
| Lingua: | English |
| Pubblicazione: |
IOP Publishing
2024
|
| Soggetti: | |
| Accesso online: | https://scholar.dlu.edu.vn/handle/123456789/3287 |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne! !
|
| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
|---|
Lascia un commento!