Thin-body effects in double-gate tunnel field-effect transistors
Scaling down the body thickness (Tb) of double-gate tunnel field-effect transistors (DG-TFETs) is helpful in suppressing short-channel effects (SCEs), but it may give rise to thin-body effects (TBEs). Based on 2-D device simulations, this study examines the mechanisms and influences of TBEs in DG-TF...
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| Главные авторы: | , , |
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| Формат: | Journal article |
| Язык: | English |
| Опубликовано: |
IOP Publishing
2024
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| Предметы: | |
| Online-ссылка: | https://scholar.dlu.edu.vn/handle/123456789/3287 |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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