Semiconductor-thickness-dependent design of hetero-gate dielectric in double-gate TFETs
This study examined the dependence of the role and design of hetero-gate dielectric (HGD) on semiconductor film thickness in double-gate tunnel field-effect transistors (TFETs). The optimal position of the source-side dielectric heterojunction is nearly independent of the film thickness and aligned...
Wedi'i Gadw mewn:
| Prif Awduron: | , , , |
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| Fformat: | Conference paper |
| Iaith: | English |
| Cyhoeddwyd: |
IEEE Publishing
2024
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| Pynciau: | |
| Mynediad Ar-lein: | https://scholar.dlu.edu.vn/handle/123456789/3288 |
| Tagiau: |
Ychwanegu Tag
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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