Increasing drain voltage of low-bandgap tunnel field-effect transistors by drain engineering
Using low-bandgap semiconductors has been definitively designated as a key technique for boosting on-current of tunnel field-effect transistors (TFETs). Based on two-dimensional simulations, this study shows an upper limit of applied drain voltage and then investigates a method of drain design to al...
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| Hauptverfasser: | , , , |
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| Format: | Conference paper |
| Sprache: | English |
| Veröffentlicht: |
IEEE Publishing
2024
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| Schlagworte: | |
| Online Zugang: | https://scholar.dlu.edu.vn/handle/123456789/3311 |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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