Design and modeling of line-tunneling field-effect transistors using low bandgap semiconductors

Design and modeling of line-tunneling field-effect transistors using low bandgap semiconductors

The low-bandgap engineering and line-tunneling architecture are the two major techniques to resolve the ON-current issues of tunnel field-effect transistors (TFETs). This paper elucidates the design and modeling of line-tunneling TFETs using low-bandgap materials. Three semiconductors, Ge, InAs, and...

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Những tác giả chính: Chun-Hsing Shih, Nguyễn, Đăng Chiến
Định dạng: Journal article
Ngôn ngữ:English
Được phát hành: IEEE Publishing 2024
Những chủ đề:
Line-tunneling
low-bandgap semiconductors
Tunnel field-effect transistors (TFETs)
Truy cập trực tuyến:https://scholar.dlu.edu.vn/handle/123456789/3291
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Thư viện lưu trữ: Thư viện Trường Đại học Đà Lạt
id oai:scholar.dlu.edu.vn:123456789-3291
record_format dspace
institution Thư viện Trường Đại học Đà Lạt
collection Thư viện số
language English
topic Line-tunneling
low-bandgap semiconductors
Tunnel field-effect transistors (TFETs)
spellingShingle Line-tunneling
low-bandgap semiconductors
Tunnel field-effect transistors (TFETs)
Chun-Hsing Shih
Nguyễn, Đăng Chiến
Design and modeling of line-tunneling field-effect transistors using low bandgap semiconductors
description The low-bandgap engineering and line-tunneling architecture are the two major techniques to resolve the ON-current issues of tunnel field-effect transistors (TFETs). This paper elucidates the design and modeling of line-tunneling TFETs using low-bandgap materials. Three semiconductors, Ge, InAs, and InSb, are considered as examples to explore their physical operations and analytical models. 2-D device simulations were performed to examine the on/off characteristics. The appropriate operational voltages depend on the associated bandgap of semiconductors. The gate voltage should be larger than the bandgap voltage (E g /q) to ensure high ON-currents, whereas the drain voltage must be less than the bandgap voltage to control OFF-leakages. Because the minimum tunnel path has a key function in determining the tunneling in line-tunneling TFETs, the tunneling current is reformulated in terms of the minimum tunnel path with friendly compact forms. Two prime design factors, the source concentration and gate-insulator thickness, are examined both analytically and numerically, showing the minimum tunnel path can serve as a useful indicator for low-bandgap line-tunneling TFETs.
format Journal article
author Chun-Hsing Shih
Nguyễn, Đăng Chiến
author_facet Chun-Hsing Shih
Nguyễn, Đăng Chiến
author_sort Chun-Hsing Shih
title Design and modeling of line-tunneling field-effect transistors using low bandgap semiconductors
title_short Design and modeling of line-tunneling field-effect transistors using low bandgap semiconductors
title_full Design and modeling of line-tunneling field-effect transistors using low bandgap semiconductors
title_fullStr Design and modeling of line-tunneling field-effect transistors using low bandgap semiconductors
title_full_unstemmed Design and modeling of line-tunneling field-effect transistors using low bandgap semiconductors
title_sort design and modeling of line-tunneling field-effect transistors using low bandgap semiconductors
publisher IEEE Publishing
publishDate 2024
url https://scholar.dlu.edu.vn/handle/123456789/3291
_version_ 1798256978448875520
spelling oai:scholar.dlu.edu.vn:123456789-32912024-03-01T04:12:06Z Design and modeling of line-tunneling field-effect transistors using low bandgap semiconductors Chun-Hsing Shih Nguyễn, Đăng Chiến Line-tunneling low-bandgap semiconductors Tunnel field-effect transistors (TFETs) The low-bandgap engineering and line-tunneling architecture are the two major techniques to resolve the ON-current issues of tunnel field-effect transistors (TFETs). This paper elucidates the design and modeling of line-tunneling TFETs using low-bandgap materials. Three semiconductors, Ge, InAs, and InSb, are considered as examples to explore their physical operations and analytical models. 2-D device simulations were performed to examine the on/off characteristics. The appropriate operational voltages depend on the associated bandgap of semiconductors. The gate voltage should be larger than the bandgap voltage (E g /q) to ensure high ON-currents, whereas the drain voltage must be less than the bandgap voltage to control OFF-leakages. Because the minimum tunnel path has a key function in determining the tunneling in line-tunneling TFETs, the tunneling current is reformulated in terms of the minimum tunnel path with friendly compact forms. Two prime design factors, the source concentration and gate-insulator thickness, are examined both analytically and numerically, showing the minimum tunnel path can serve as a useful indicator for low-bandgap line-tunneling TFETs. 61 6 1907-1913 2024-03-01T04:12:00Z 2024-03-01T04:12:00Z 2014 Journal article Bài báo đăng trên tạp chí thuộc ISI, bao gồm book chapter https://scholar.dlu.edu.vn/handle/123456789/3291 10.1109/TED.2014.2316217 en IEEE Transactions on Electron Devices 0018-9383 [1] A. M. Ionescu and H. 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